XPS analysis of aluminum nitride films deposited by plasma source molecular beam epitaxy

Surface and Interface Analysis

Volumn 40, Issue 9, 2008, Pages 1254-1261

  Rosenberger, Leland ^a   Baird, Ronald ^b   McCullen, Erik ^a   Auner, Gregory ^a   Shreve, Gina ^a  

^a Wayne State University   (United States)

^b WAYNE STATE UNIVERSITY   (United States)

Author keywords

Aluminum nitride; Binding energy; Depth profiling; Oxygen impurities; Plasma source molecular beam deposition

Indexed keywords

ALUMINA; ALUMINUM; ALUMINUM COMPOUNDS; BINDING ENERGY; CHLORINE COMPOUNDS; COMPLEXATION; CORUNDUM; CRYSTAL GROWTH; DEPTH PROFILING; EPITAXIAL GROWTH; FILM GROWTH; GRAIN BOUNDARIES; LIGHT METALS; LITHOGRAPHY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; MOLECULAR ORBITALS; MOLECULAR SPECTROSCOPY; NITRIDES; NITROGEN; NONMETALS; OXYGEN; PHOTOELECTRON SPECTROSCOPY; PLASMA SOURCES; PLASMAS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SILICON;

ALUMINUM NITRIDE; ALUMINUM NITRIDE FILMS; C -AXIS; CHEMICAL STATES; CRYSTAL GRAINS; CRYSTALLINE ALUMINUM; HIGH RESOLUTION X-RAY DIFFRACTION; LATTICE PARAMETERS; OCTAHEDRAL COMPLEXES; OXYGEN CONTENTS; OXYGEN IMPURITIES; OXYGEN LEVELS; PLASMA SOURCE MOLECULAR BEAM DEPOSITION; PLASMA SOURCE MOLECULAR BEAM EPITAXY; SILICON SUBSTRATES; X-RAY PHOTOELECTRON SPECTROSCOPY XPS; XPS ANALYSIS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 52649139333     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.2874     Document Type: Article

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