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Volumn 257, Issue 17, 2011, Pages 7827-7830

Properties of AlN grown by plasma enhanced atomic layer deposition

(7) Bosund, Markus a Sajavaara, Timo b Laitinen, Mikko b Huhtio, Teppo a Putkonen, Matti c Airaksinen, Veli Matti a Lipsanen, Harri a

a AALTO UNIVERSITY (Finland)

b UNIVERSITY OF JYVÄSKYLÄ (Finland)

c Beneq Oy (Finland)

Author keywords

Aluminum nitride; Atomic layer deposition; Plasma

Indexed keywords

ALUMINUM COATINGS; ALUMINUM NITRIDE; AMORPHOUS FILMS; ATOMIC LAYER DEPOSITION; ATOMS; CARBON FILMS; ELECTRIC DISCHARGES; FILM GROWTH; GROWTH TEMPERATURE; HYDROGEN; III-V SEMICONDUCTORS; PLASMAS; REFRACTIVE INDEX; SURFACE ROUGHNESS;

ATOMIC CONCENTRATION; GROWTH PARAMETERS; HYDROGEN CONCENTRATION; INVERSE DEPENDENCE; OXYGEN CONCENTRATIONS; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; TEMPERATURE RANGE; TRIMETHYLALUMINUM;

NITROGEN COMPOUNDS;

EID: 79957494811 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2011.04.037 Document Type: Article

Times cited : (124)

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