AlN as passivation for surface channel FETs on H-terminated diamond

Diamond and Related Materials

Volumn 19, Issue 7-9, 2010, Pages 932-935

  Kueck, D ^a   Leber, P ^a   Schmidt, A ^a   Speranza, G ^b   Kohn, E ^a  

^a UNIVERSITY OF ULM   (Germany)

^b ITC IRST   (Italy)

Author keywords

Diamond; FET; Free surface passivation; H terminated surface

Indexed keywords

ALN; CURRENT LEVELS; DEPOSITION TEMPERATURES; FREE SURFACE PASSIVATION; FREE SURFACES; H-TERMINATED SURFACE; HYDROGENATED DIAMOND; MESFETS; SURFACE CHANNEL; TRANSISTOR OPERATION;

ATOMIC LAYER DEPOSITION; DIAMONDS; MESFET DEVICES;

PASSIVATION;

EID: 77955230550     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2010.02.026     Document Type: Article

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