High quality AlN grown on SiC by metal organic chemical vapor deposition

Applied Physics Letters

Volumn 93, Issue 19, 2008, Pages

  Chen, Z ^a   Newman, S ^a   Brown, D ^a   Chung, R ^a   Keller, S ^a   Mishra, U K ^a   Denbaars, S P ^a   Nakamura, S ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; ATOMS; CHEMICAL VAPOR DEPOSITION; INDUSTRIAL CHEMICALS; MAGNESIUM PRINTING PLATES; MODULATION; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANOMETALLICS; SILICON CARBIDE; SOIL CONSERVATION; TENSILE STRAIN; THREE DIMENSIONAL; VAPORS;

2D GROWTHS; ALN FILMS; ALN LAYERS; ATOMIC FORCES; ATOMIC TERRACES; DISLOCATION DENSITIES; FULL WIDTHS AT HALF MAXIMUMS; GROWTH CONDITIONS; GROWTH MODES; HIGH QUALITIES; LOW DISLOCATION DENSITIES; METAL ORGANIC; ROCKING CURVES; SIC SUBSTRATES; X-RAY DIFFRACTIONS;

FILM GROWTH;

EID: 56249128579     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2988323     Document Type: Article

References (26)

1. Y. Taniyasu, M. Kasu, and T. Makimoto, Nature (London) 441, 325 (2006).
2. J. Li, Z. Y. Fan, R. Dahal, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 89, 213510 (2006).
3. M. Shatalow, M. Gaevski, V. Adivarahan, and A. Khan, Jpn. J. Appl. Phys., Part 2 45, L1286 (2006).
4. Y. Kato, S. Kitamura, K. Hiramatsu, and N. Sawaki, J. Cryst. Growth 144, 133 (1994).
5. D. Kapolnek, S. Keller, R. Vetury, R. D. Underwood, P. Kozodoy, S. P. DenBaars, and U. K. Mishra, Appl. Phys. Lett. 71, 1204 (1997).
6. T. S. Zheleva, O.-H. Nam, M. D. Bremser, and R. F. Davis, Appl. Phys. Lett. 71, 2472 (1997).
7. K. Lithicum, T. Gehrke, D. Thomson, E. Carlson, P. Rajagopal, T. Smith, D. Batchelor, and R. Davis, Appl. Phys. Lett. 75, 196 (1999).
8. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamanda, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and M. Chocho, Appl. Phys. Lett. 72, 211 (1998).
9. S. Tanaka, S. Iwai, and Y. Aoyagi, Appl. Phys. Lett. 69, 4096 (1996).
10. K. Pakula, R. Bozek, J. M. Baranowski, J. Jasinski, and Z. Liliental-Weber, J. Cryst. Growth 267, 1 (2004).
11. E. D. Bourret-Courchesne, K. M. Yu, M. Benamara, Z. Liliental-Weber, and J. Washburn, J. Electron. Mater. 30, 1417 (2001).
12. K. Jeganathan, M. Shimizu, and H. Okumura, Appl. Phys. Lett. 86, 191908 (2005).
13. C. I. H. Ashby, C. C. Mitchell, J. Han, N. A. Missert, P. P. Provencio, D. M. Follstaedt, G. M. Peake, and L. Griego, Appl. Phys. Lett. 77, 3233 (2000).
14. Z. Chen, R. S. Q. Fareed, M. Gaevski, V. Adivarahan, J. W. Yang, J. Mei, F. A. Ponce, and M. A. Khan, Appl. Phys. Lett. 89, 081905 (2006).
15. M. Imura, K. Nakano, G. Narita, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, and A. Bandoh, J. Cryst. Growth 298, 257 (2007).
16. M. Imura, H. Sugimura, N. Okada, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, and A. Bandoh, J. Cryst. Growth 310, 2308 (2008).
17. M. Imura, K. Nakano, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, and A. Bandoh, Jpn. J. Appl. Phys., Part 1 46, 1458 (2007).
18. H. Hirayama, T. Yatabe, N. Noguchi, T. Ohashi, and N. Kamata, Appl. Phys. Lett. 91, 071901 (2007).
19. T. M. Katona, P. Cantu, S. Keller, Y. Wu, J. S. Speck, and S. P. DenBaars, Appl. Phys. Lett. 84, 5025 (2004).
20. S. Heikman, S. Keller, S. Newman, Y. Wu, C. Moe, B. Moran, M. Schmidt, U. K. Mishra, J. S. Speck, and S. P. Denbaars, Jpn. J. Appl. Phys., Part 2 44, L405 (2005).
21. S. Iwama, K. Hayakawa, and T. Arizumi, J. Cryst. Growth 56, 265 (1982).
22. F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. B 56, R10024 (1997).
23. J. H. Edgar, Group III Nitrides, London: INSPEC (1994).
24. M. A. Khan, M. Shatalov, H. P. Maruska, H. M. Wang, and E. Kuokstis, Jpn. J. Appl. Phys., Part 1 44, 7191 (2005).
25. W. M. Yim and R. J. Paff, J. Appl. Phys. 45, 1456 (1974).
26. J. R. O'Conner and J. Smiltens, Silicon Carbide (New York, Pergamon, 1960).