Characterization of AlN thin films prepared by unbalanced magnetron sputtering

Journal of the Electrochemical Society

Volumn 151, Issue 10, 2004, Pages

  Wang, C C ^a   Chiu, M C ^a   Shiao, M H ^b   Shieu, F S ^a  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b National Science Council   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; COMPOSITION; MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SPUTTERING; TRANSMISSION ELECTRON MICROSCOPY; ULTRASONIC VELOCITY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

GAS MIXTURES; GLASS SUBSTRATES; POWER SUPPLY; UNBALANCED MAGNETRON;

THIN FILMS;

EID: 8644250627     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1790531     Document Type: Article

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