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Volumn 96, Issue 20, 2010, Pages

Surface acoustic wave devices based on AlN/sapphire structure for high temperature applications

Author keywords

[No Author keywords available]

Indexed keywords

AIR ATMOSPHERE; ALN FILMS; FREQUENCY CHARACTERIZATION; HIGH TEMPERATURE; LAYERED STRUCTURES; POTENTIAL SUBSTRATE; SAW DELAY LINE; SCANNING ELECTRONS; SURFACE ACOUSTIC WAVE DEVICE; X-RAY DIFFRACTION MEASUREMENTS;

EID: 77953011890     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3430042     Document Type: Article
Times cited : (97)

References (22)
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    • Hornsteiner, J.1    Born, E.2    Fischerauer, G.3    Riha, E.4
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    • 36249004509 scopus 로고    scopus 로고
    • Oxidation behavior of AlN films at high temperature under controlled atmosphere
    • DOI 10.1016/j.jeurceramsoc.2007.07.015, PII S0955221907004499
    • C.-Y. Lin and F.-H. Lu, J. Eur. Ceram. Soc. JECSER 0955-2219 28, 691 (2008). 10.1016/j.jeurceramsoc.2007.07.015 (Pubitemid 350121151)
    • (2008) Journal of the European Ceramic Society , vol.28 , Issue.3 , pp. 691-698
    • Lin, C.-Y.1    Lu, F.-H.2
  • 17
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    • Theoretical and experimental investigation of gigahertz-band, temperature-compensated electromechanical coupling configurations based on AlN films
    • DOI 10.1063/1.2837179
    • C. Caliendo, Appl. Phys. Lett. APPLAB 0003-6951 92, 033505 (2008). 10.1063/1.2837179 (Pubitemid 351160657)
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  • 21
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    • Ph.D. thesis, École polytechnique f́d́rale de Lausanne (EPFL), Lausanne, Switzerland.
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    • Highly textured growth of AlN films on sapphire by magnetron sputtering for high temperature SAW applications
    • JPAPBE 0022-3727 (submitted).
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    • J. Phys. D
    • Aubert, T.1    Assouar, M.B.2    Legrani, O.3    Elmazria, O.4    Robert, S.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.