Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition

Thin Solid Films

Volumn 446, Issue 2, 2004, Pages 227-231

  Lee, Yong Ju ^a   Kang, Sang Won ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Adsorption; Aluminum nitride; Atomic layer deposition; Surface limited reaction

Indexed keywords

ALUMINUM NITRIDE; AUGER ELECTRON SPECTROSCOPY; ENERGY GAP; FILM GROWTH; HYDROGEN; IMPURITIES; ORGANOMETALLICS; OXIDATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL STABILITY; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION;

THIN FILMS;

EID: 0346750525     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.10.004     Document Type: Article

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