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Volumn 49, Issue 9-11, 2009, Pages 1236-1239

Reliability analysis of InGaN Blu-Ray laser diode

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATING FACTORS; AGEING TREATMENTS; BLU-RAY; DEGRADATION RATE; INGAN LASER DIODES; LASER DIODES; LINEAR CORRELATION; NON-RADIATIVE LIFETIMES; RELIABILITY TEST; SLOPE EFFICIENCIES; STRESS CURRENT; STRESS TEMPERATURE; THERMAL STORAGE; THRESHOLD CURRENTS;

EID: 69249202295     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2009.07.002     Document Type: Article
Times cited : (6)

References (10)
  • 1
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    • InGaN-based multi-quantum-well structure laser diodes
    • Nakamura S., et al. InGaN-based multi-quantum-well structure laser diodes. Jpn J Appl Phys 35 (1996) L74-L76
    • (1996) Jpn J Appl Phys , vol.35
    • Nakamura, S.1
  • 2
  • 3
    • 0019576239 scopus 로고
    • Method for determining effective nonradiative lifetime and leakage losses in double-heterostructure lasers
    • Van Opdorp C. Method for determining effective nonradiative lifetime and leakage losses in double-heterostructure lasers. J Appl Phys 52 (1981) 3827
    • (1981) J Appl Phys , vol.52 , pp. 3827
    • Van Opdorp, C.1
  • 4
    • 7044233214 scopus 로고    scopus 로고
    • Junction-temperature measurement in GaN ultraviolet light emitting diodes using diode forward voltage method
    • Xi Y., and Schubert E.F. Junction-temperature measurement in GaN ultraviolet light emitting diodes using diode forward voltage method. Appl Phys Lett 85 (2004) 2163-2165
    • (2004) Appl Phys Lett , vol.85 , pp. 2163-2165
    • Xi, Y.1    Schubert, E.F.2
  • 5
    • 0021480052 scopus 로고
    • Measurement of radiative and nonradiative recombination rates in InGaAsP and AIGaAs light sources
    • Olshansky R., Manning J., and Powazinik W. Measurement of radiative and nonradiative recombination rates in InGaAsP and AIGaAs light sources. IEEE J Quantum Electron Qe-20 8 (1984)
    • (1984) IEEE J Quantum Electron , vol.Qe-20 , Issue.8
    • Olshansky, R.1    Manning, J.2    Powazinik, W.3
  • 7
    • 13844254127 scopus 로고    scopus 로고
    • Dislocation related issues in the degradation of GaN-based laser diodes
    • Tomiya S., Hino T., Goto S., Takeya M., and Ikeda M. Dislocation related issues in the degradation of GaN-based laser diodes. IEEE J Sel Top Quantum Electron 10 6 (2004) 1277-1286
    • (2004) IEEE J Sel Top Quantum Electron , vol.10 , Issue.6 , pp. 1277-1286
    • Tomiya, S.1    Hino, T.2    Goto, S.3    Takeya, M.4    Ikeda, M.5
  • 9
    • 0004859009 scopus 로고    scopus 로고
    • InGaN-based laser diodes with an estimated lifetime of longer than 10,000 hours
    • Nakamura S. InGaN-based laser diodes with an estimated lifetime of longer than 10,000 hours. Proc SPIE 3283 2 (1998) 2-13
    • (1998) Proc SPIE , vol.3283 , Issue.2 , pp. 2-13
    • Nakamura, S.1
  • 10
    • 0000782336 scopus 로고    scopus 로고
    • Performance and degradation of continuous-wave InGaN multiple-quantum-well laser diodes on epitaxially laterally overgrown GaN substrates
    • Kneissl M., Bour D.P., Romano L., Van de Walle C.G., Northrup J.E., Wong W.S., et al. Performance and degradation of continuous-wave InGaN multiple-quantum-well laser diodes on epitaxially laterally overgrown GaN substrates. Appl Phys Lett 77 13 (2000) 1931-1933
    • (2000) Appl Phys Lett , vol.77 , Issue.13 , pp. 1931-1933
    • Kneissl, M.1    Bour, D.P.2    Romano, L.3    Van de Walle, C.G.4    Northrup, J.E.5    Wong, W.S.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.