Degradation of InGaN-based laser diodes analyzed by means of electrical and optical measurements

Applied Physics Letters

Volumn 97, Issue 26, 2010, Pages

  Meneghini, M ^a   Trivellin, N ^a   Orita, K ^b   Takigawa, S ^b   Tanaka, T ^b   Ueda, D ^b   Meneghesso, G ^a   Zanoni, E ^a  

^a UNIVERSITY OF PADOVA   (Italy)

^b PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; CURRENT CONFINEMENT; DEGRADATION KINETICS; EPITAXIAL STRUCTURE; LASER DIODES; OPTICAL MEASUREMENT; OPTICAL TECHNIQUE;

DEGRADATION; DIODES; OPTICAL DATA PROCESSING; OPTICAL ENGINEERING; POINT DEFECTS;

LIGHT EMITTING DIODES;

EID: 78650867178     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3527088     Document Type: Article

References (15)

1. V. Kummler, G. Bruderl, S. Bader, S. Miller, A. Weimar, A. Lell, V. Harle, U. T. Schwartz, N. Gmeinwieser, and W. Wegscheider, Phys. Status Solidi A 0031-8965 194, 419 (2002). 10.1002/1521-396X(200212)194:2<419::AID- PSSA419>3.0.CO;2-B
2. T. Schoedl, U. T. Schwarz, V. Kummler, M. Furitsch, A. Leber, A. Miller, A. Lell, and V. Härle, J. Appl. Phys. 0021-8979 97, 123102 (2005). 10.1063/1.1929851 (Pubitemid 40925278)
3. M. Meneghini, G. Meneghesso, N. Trivellin, E. Zanoni, K. Orita, M. Yuri, and D. Ueda, IEEE Electron Device Lett. 0741-3106 29, 578 (2008). 10.1109/LED.2008.921098 (Pubitemid 351791458)
4. S. Tomiya, O. Goto, and M. Ikeda, Proc. IEEE 0018-9219 98, 1208 (2010). 10.1109/JPROC.2009.2032306
5. J. Müller, G. Brüderl, M. Schillgalies, S. Tautz, D. Dini, A. Breidenassel, B. Galler, and S. Lutgen, Appl. Phys. Lett. 0003-6951 95, 051104 (2009). 10.1063/1.3194139
6. M. Rossetti, T. M. Smeeton, W. -S. Tan, M. Kauer, S. E. Hooper, J. Heffernan, H. Xiu, and C. J. Humphreys, Appl. Phys. Lett. 0003-6951 92, 151110 (2008). 10.1063/1.2908919 (Pubitemid 351555673)
7. W. S. Tan, M. Kauer, S. E. Hooper, T. M. Smeeton, V. Bousquet, M. Rossetti, J. Heffernan, H. Xiu, and C. J. Humphreys, Phys. Status Solidi A 0031-8965 206, 1205 (2009). 10.1002/pssa.200880842
8. L. Marona, P. Wisniewski, P. Prystawko, I. Grzegory, T. Suski, S. Porowski, P. Perlin, R. Czernecki, and M. Leszczynski, Appl. Phys. Lett. 0003-6951 88, 201111 (2006). 10.1063/1.2204845 (Pubitemid 43781753)
9. K. Orita, S. Takigawa, M. Yuri, T. Tanaka, M. Meneghini, N. Trivellin, L. Trevisanello, E. Zanoni, and G. Meneghesso, 2009 IEEE International Reliability Physics Symposium, 26-30 April 2009, pp. 736-740.
10. O. Pursiainen, N. Linder, A. Jaeger, R. Oberschmid, and K. Streubel, Appl. Phys. Lett. 0003-6951 79, 2895 (2001). 10.1063/1.1413721 (Pubitemid 33608091)
11. M. Meneghini, A. Tazzoli, G. Mura, G. Meneghesso, and E. Zanoni, IEEE Trans. Electron Devices 0018-9383 57, 108 (2010). 10.1109/TED.2009.2033649
12. M. Meneghini, N. Trivellin, K. Orita, S. Takigawa, M. Yuri, T. Tanaka, D. Ueda, E. Zanoni, and G. Meneghesso, IEEE Electron Device Lett. 0741-3106 30, 356 (2009). 10.1109/LED.2009.2014570
13. M. Meneghini, N. Trivellin, G. Meneghesso, E. Zanoni, U. Zehnder, and B. Hahn, J. Appl. Phys. 0021-8979 106, 114508 (2009). 10.1063/1.3266014
14. Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, Appl. Phys. Lett. 0003-6951 91, 141101 (2007). 10.1063/1.2785135 (Pubitemid 47534188)
15. M. S. Sze, Physics of Semiconductor Devices (Wiley, New York, 2006). 10.1002/0470068329