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Journal of Crystal Growth

Volumn 223, Issue 1-2, 2001, Pages 38-42

Electron traps and growth rate of buffer layers in unintentionally doped GaN

(4) Cho, H K a Kim, K S a Hong, C H a Lee, H J a

a Chonbuk National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); ELECTRON TRAPS; NITRIDES; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY; VAPOR DEPOSITION; X RAY CRYSTALLOGRAPHY;

GALLIUM NITRIDES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034825466 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(00)00982-9 Document Type: Article

Times cited : (76)

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