60Co gamma-irradiation-induced defects in n-GaN

Applied Physics Letters

Volumn 80, Issue 23, 2002, Pages 4354-4356

  Umana Membreno, G A ^a   Dell, J M ^a   Hessler, T P ^a   Nener, B D ^a   Parish, G ^a   Faraone, L ^a   Mishra, U K ^b  

^a UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP-LEVEL DEFECTS; DEFECT LEVELS; EMISSION CHARACTERISTICS; GAMMA IRRADIATION; SCHOTTKY DIODES; THERMAL ACTIVATION ENERGIES; TRANSIENT CAPACITANCE;

CAPACITANCE MEASUREMENT; DEFECTS; GALLIUM NITRIDE; GAMMA RAYS; IRRADIATION; SCHOTTKY BARRIER DIODES;

ACTIVATION ENERGY;

EID: 79956022333     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1483390     Document Type: Article

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