Electrical and recombination properties and deep traps spectra in MOCVD ELOG GaN layers

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 2087-2090

  Lee, In Hwan ^a   Polyakov, A Y ^b,d   Smirnov, N B ^b   Govorkov, A V ^b   Markov, A V ^b   Pearton, S J ^c  

^a Chonbuk National University   (South Korea)

^b INSTITUTE OF RARE METALS   (Russian Federation)

^c UNIVERSITY OF FLORIDA   (United States)

^d CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP TRAPS SPECTRA; DISLOCATION DENSITY; EPITAXIAL LATERAL OVERGROWTH TECHNIQUE (ELOG); RECOMBINATION PROPERTIES; 68.37.HK; 71.55.EY; 73.61.EY; 78.60.HK; 81.05.EA; 81.15.GH;

CATHODOLUMINESCENCE; DIFFUSION; ELECTRIC PROPERTIES; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; ELECTRIC CURRENTS; EPITAXIAL GROWTH; ORGANOMETALLICS;

THIN FILMS; ELECTRIC PROPERTIES;

EID: 33746339508     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565195     Document Type: Conference Paper

References (11)

1. C. A. Usui, H. Sunakawa, A. Sakai, and A. A. Yamaguchi, Jpn. J. Appl. Phys. 36, L899 (1997).
2. S. Nakamura, in:GaN and Related Materials II, edited by S. J. Pearton (Gordon and Breach Science, The Netherlands, 2000), pp. 1-46.
3. P. Muret, A. Phillippe, E. Monroy, E. Munoz, B. Beaumont, F. Omnes, and P. Gibart, J. Appl. Phys. 91, 2998 (2002).
4. F. D. Auret, W. E. Meyer, L. Wu, M. Hayes, M. J. Legodi, B. Beaumont, and P. Gibart, phys. stat. sol. (a) 201, 2271 (2004).
5. A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Z.-Q. Fang, D. C. Look, R. J. Molnar, and A. V. Osinsky, J. Appl. Phys. 91, 6580 (2002).
6. A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Z.-Q. Fang, D. C. Look, S. S. Park, and J. H. Han, J. Appl. Phys. 92, 5241 (2002).
7. A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, Z.-Q. Fang, D. C. Look, S. S. Park, and J. H. Han, J. Appl. Phys. 92, 5238 (2002).
8. Z.-Q. Fang, J. W. Hemsky, D. C. Look, and M. P. Mack, Appl. Phys. Lett. 72, 448 (1997).
9. O. Yastrubchak, T. Wosinski, A. Makosa, T. Figielski, S. Porowski, I. Grzegory, R. Czernecki, and P. Perlin, Eur. Phys. J. Appl. Phys. 27, 201 (2004).
10. C. B. Soh, D. Z. Chi, A. Ramam, H. F. Lim, and S. J. Chua, Mater. Sci. Semicond. Proc. 4, 595 (2001).
11. F. D. Auret, S. A. Goodman, F. K. Koschnick, J.-M. Spaeth, and P. Gibart, Appl. Phys. Lett. 74, 407 (1999).