Electronic properties of the EC -0.6 eV electron trap in n -type GaN

Journal of Applied Physics

Volumn 103, Issue 2, 2008, Pages

  Pernot, Julien ^a   Muret, Pierre ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRONIC PROPERTIES; FREE ENERGY; GALLIUM COMPOUNDS;

SPACE-CHARGE DEPTH MODULATION;

ELECTRON TRAPS;

EID: 38849109348     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2830860     Document Type: Article

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