Capture kinetics at deep-level electron traps in GaN-based laser diode

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 8, 2007, Pages 2878-2882

  Yastrubchak, O ^a   Wosinski T ^a   Makosa A ^a   Figielski, T ^a   Porowski, S ^b   Grzegory, I ^b   Czernecki, R ^b   Perlin, P ^b  

^a INSTITUTE OF PHYSICS   (Poland)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CAPTURE KINETICS; DEEP LEVELS; EXTENDED DEFECTS; INTERNATIONAL CONFERENCES; LASER DIODE;

ELECTRIC CONDUCTIVITY; ELECTRON TRAPS; EXPLOSIVE ACTUATED DEVICES; GALLIUM ALLOYS; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR MATERIALS;

CRYSTALS;

EID: 35248855794     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200675432     Document Type: Conference Paper

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