Structural defects and degradation phenomena in high-power pure-blue InGaN-based laser diodes

Proceedings of the IEEE

Volumn 98, Issue 7, 2010, Pages 1208-1213

  Tomiya, Shigetaka ^a   Goto, Osamu ^a   Ikeda, Masao ^a  

^a SONY CORPORATION   (Japan)

Author keywords

Current injection free region; Degradation; Dislocation; GaInN alloys; GaN substrate; Inversion domain boundary; MOCVD; Nonradiative recombination center; Pure blue laser diodes

Indexed keywords

DEFECTS; DEGRADATION; DIODES; DISLOCATIONS (CRYSTALS); FLUORESCENCE MICROSCOPY; GALLIUM NITRIDE; III-V SEMICONDUCTORS; INDIUM ALLOYS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM WELL LASERS; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM WELLS; VANADIUM ALLOYS;

FREE REGION; GAN SUBSTRATE; INVERSION DOMAIN BOUNDARIES; NONRADIATIVE RECOMBINATION CENTERS; PURE BLUE;

GALLIUM ALLOYS;

EID: 77953686730     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2009.2032306     Document Type: Conference Paper

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