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Volumn 97, Issue 11, 2010, Pages

Deep level transient spectroscopy in plasma-assisted molecular beam epitaxy grown Al0.2 Ga0.8N/GaN interface and the rapid thermal annealing effect

(9) Park, Young S a,c Lee, Minyoung a Jeon, Kiyoung a Yoon, Im T a Shon, Yoon a Im, Hyunsik a Park, C J a Cho, Hoon Y a Han, Myung Soo b

a Dongguk University (South Korea)

b Korea Photonics Technology Institute (KOPTI) (South Korea)

c Pohang University of Science and Technology (POSTECH) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL; DISLOCATION DENSITIES; DLTS; HETEROSTRUCTURES; HIGH TEMPERATURE; HYDROGEN TREATMENTS; N VACANCY; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; PULSE LENGTH; THERMAL ANNEALING EFFECTS;

ACTIVATION ENERGY; EPITAXIAL GROWTH; GALLIUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 77956839034 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3491798 Document Type: Article

Times cited : (28)

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