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Materials Science and Engineering: B

Volumn 113, Issue 3, 2004, Pages 248-252

Field dependent transformation of electron traps in GaN p-n diodes grown by metal-organic chemical vapour deposition

(4) Asghar, M a,c Muret, P a Beaumont, B b Gibart, P b

a CNRS (France)

b CRHEA CNRS (France)

c THE ISLAMIA UNIVERSITY OF BAHAWALPUR (Pakistan)

Author keywords

Defect formation; DLTS; Field effect; Gallium nitride; MOCVD

Indexed keywords

ACTIVATION ANALYSIS; DIODES; ELECTRIC FIELD EFFECTS; ELECTRON TRAPS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; REDUCTION;

CONDUCTION BANDS; DEEP LEVEL TRANSIENT FOURIER SPECTROSCOPY (DLTFS); DEFECT FORMATION;

GALLIUM NITRIDE;

EID: 6344239114 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(04)00431-3 Document Type: Article

Times cited : (42)

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