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Volumn 77, Issue 4, 2000, Pages 546-548

Photoelectric properties of the 0.44 eV deep level-to-band transition in gallium nitride investigated by optical admittance spectroscopy

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EID: 0038583753     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.127039     Document Type: Article
Times cited : (12)

References (17)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.