Deep level transient spectroscopy signatures of majority traps in GaN p-n diodes grown by metal-organic vapor-phase epitaxy technique on GaN substrates

Physica B: Condensed Matter

Volumn 404, Issue 23-24, 2009, Pages 4889-4891

  PLaczek Popko E ^a   Trzmiel, J ^a   Zielony, E ^a   Grzanka, S ^b   Czernecki, R ^b,c   Suski, T ^c  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b TOPGAN LTD   (Poland)

^c INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

DLTS; GaN; p n GaN diodes

Indexed keywords

CAPTURE CROSS SECTIONS; DLTS; EXTENDED DEFECT; GAN LAYERS; GAN SUBSTRATE; METALORGANIC VAPOR PHASE EPITAXY; MG-DOPED; MOVPE; N-TYPE MATERIALS; P-N DIODE; P-TYPE; TEMPERATURE RANGE; THERMALLY ACTIVATED;

ACTIVATION ENERGY; ARRHENIUS PLOTS; CRYSTAL GROWTH; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIODES; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; POINT DEFECTS; VAPORS;

GALLIUM ALLOYS;

EID: 74349107668     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.08.237     Document Type: Article

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