Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon

Journal of Applied Physics

Volumn 98, Issue 5, 2005, Pages

  Armstrong, A ^a   Arehart, A R ^a   Green, D ^b   Mishra, U K ^b   Speck, J S ^b   Ringel, S A ^a  

^a Ohio State University   (United States)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL SPECTRUM; GAN FILMS; LATTICE DISTORTION; PHOTOCAPACITANCE;

CARBON; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; LATTICE CONSTANTS; LUMINESCENCE; MOLECULAR BEAM EPITAXY; SILICON;

GALLIUM NITRIDE;

EID: 25144489522     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2005379     Document Type: Article

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