Low dislocation density nonpolar (11-20) GaN films achieved using scandium nitride interlayers

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 7-8, 2010, Pages 1778-1780

  Moram, M A ^a   Kappers, M J ^a   Humphreys, C J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Cathodoluminescence; Defects; Dislocations; GaN; MOCVD; Structure

Indexed keywords

CATHODOLUMINESCENCE; DEFECTS; DISLOCATIONS (CRYSTALS); III-V SEMICONDUCTORS; LUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SAPPHIRE; SCANDIUM COMPOUNDS; STRUCTURE (COMPOSITION); SURFACE ROUGHNESS; WIDE BAND GAP SEMICONDUCTORS;

CONTROL SAMPLES; DISLOCATION DENSITIES; GAN FILM; LOW-DISLOCATION DENSITY; LUMINESCENCE INTENSITY; NON-POLAR; PRISMATIC STACKING FAULTS; X-RAY DIFFRACTION DATA;

GALLIUM NITRIDE;

EID: 77955836620     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200983494     Document Type: Conference Paper

References (28)

1. T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys. 36, L382 (1997).
2. M. C. Schmidt, K.-C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, Jpn. J. Appl. Phys. 46, L190 (2007).
3. T. Paskova, Phys. Status Solidi B 245, 1011 (2008).
4. P. Vennéguès, Z. Bougrioua, and T. Guehne, Jpn. J. Appl. Phys. 46, 4089 (2007).
5. H. Lahrèche, P. Vennéguès, B. Beaumont, and P. Gibart, J. Cryst. Growth 205, 245 (1999).
6. S. Keller, G. Parish, J. S. Speck, S. P. DenBaars, and U. K. Mishra, Appl. Phys. Lett. 77, 2665 (2000).
7. M. J. Kappers, R. Datta, R. A. Oliver, F. D. G. Rayment, M. E. Vickers, and C. J. Humphreys, J. Cryst. Growth 300, 70 (2007).
8. P. Gibart, Rep. Prog. Phys. 67, 667 (2004).
9. R. Datta, M. J. Kappers, M. E. Vickers, J. S. Barnard, and C. J. Humphreys, Superlatt. Microstructures 36, 393 (2004).
10. M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, and S.P. Den-Baars, Appl. Phys. Lett. 81, 1201 (2002).
11. Z. Bougrioua, M. Laügt, P. Vennéguès, I. Cestier, T. Gühne, E. Frayssinet, P. Gibart, and M. Leroux, Phys. Status Solidi A 204, 282 (2007).
12. A. Chakraborty, K.C. Kim, F. Wu, J.S. Speck, S.P. Den-Baars, and U.K. Mishra, Appl. Phys. Lett. 89, 041903 (2006).
13. J.L. Hollander, M.J. Kappers, and C.J. Humphreys, Physica B 401, 307 (2007).
14. M. A. Moram, Y. Zhang, M. J. Kappers, Z. H. Barber, and C. J. Humphreys, Appl. Phys. Lett. 91, 152101 (2007).
15. M. A. Moram, M. J. Kappers, Z. H. Barber, and C. J. Humphreys, J. Cryst. Growth 298, 268 (2007).
16. M. A. Moram, M. J. Kappers, Y. Zhang, Z. H. Barber, and C. J. Humphreys, Phys. Status Solidi A 205, 1064 (2008).
17. M. A. Moram, C. F. Johnston, M. J. Kappers, and C. J. Humphreys, J. Cryst. Growth 311 3239 (2009).
18. C. F. Johnston, M. J. Kappers, M. A. Moram, J. L. Hollander, and C. J. Humphreys, J. Cryst. Growth 311 3295 (2009).
19. C. F. Johnston, M. J. Kappers, M. A. Moram, J. L. Hollander, and C. J. Humphreys, Phys. Status Solidi A 206 1190 (2009).
20. J. L Hollander, M. J. Kappers, C. McAleese, and C. J. Humphreys, Appl. Phys. Lett. 92, 101104 (2008).
21. R. A. Oliver, M. J. Kappers, J. Sumner, R. Datta, and C.J. Humphreys, J. Cryst. Growth 289, 506 (2006).
22. M. A. Moram, C. F. Johnston, M. J. Kappers, and C. J. Humphreys, Semicond. Sci. Technol. (2009), submitted.
23. M. A. Moram and M. E. Vickers, Rep. Prog. Phys. 72, 036502 (2009).
24. I. Horcas, R. Fernandez, J. M. Gomez-Rodriguez, J. Colchero, J. Gomez-Herrero, and A. M. Baro, Rev. Sci. Instrum, 78, 013705 (2007).
25. M. A. Moram, C. F. Johnston, J. L. Hollander, M. J. Kappers, and C.J. Humphreys, J. Appl. Phys. 105 113501 (2009).
26. M. A. Moram, C. F. Johnston, M. J. Kappers, and C. J. Humphreys, J. Phys. D: Appl. Phys. 42 135407 (2009).
27. M. A. Moram, M. E. Vickers, M. J. Kappers, and C. J. Humphreys, J. Appl. Phys. 103 093528 (2008).
28. T. J. Badcock, M. Häberlen, M. J. Kappers, M. A. Moram, P. Dawson, C. J. Humphreys, and R A Oliver, Phys. Status Solidi C, these Proceedings.