Defect structure in heteroepitaxial semipolar (1122) (Ga, Al)N

Journal of Physics Condensed Matter

Volumn 22, Issue 35, 2010, Pages

  Dasilva, Y Arroyo Rojas ^a   Chauvat, M P ^a   Ruterana, P ^a   Lahourcade, L ^b   Monroy, E ^b   Nataf, G ^c  

^a Direction de la Recherche Fondamentale   (France)

^b CEA GRENOBLE   (France)

^c CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; BASAL AND PRISMATIC STACKING FAULTS; CURVED STRUCTURE; DENSITY OF DISLOCATION; EPITAXIAL RELATIONSHIPS; EXTENDED DEFECT; HETEROEPITAXIAL; MBE DEPOSITION; METAL-ORGANIC VAPOR PHASE EPITAXY; MOVPE; PARTIAL DISLOCATIONS; SEMIPOLAR; SHOCKLEY PARTIAL DISLOCATIONS; THREADING DISLOCATION;

DEFECT STRUCTURES; EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; ORGANOMETALLICS; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM ALLOYS;

EID: 77956988910     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/22/35/355802     Document Type: Article

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