Interfacial structure of a -plane GaN grown on r -plane sapphire

Applied Physics Letters

Volumn 90, Issue 8, 2007, Pages

  Kroger R ^a   Paskova, T ^a   Figge, S ^a   Hommel, D ^a   Rosenauer, A ^a   Monemar, B ^b  

^a UNIVERSITY OF BREMEN   (Germany)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); METALLORGANIC VAPOR PHASE EPITAXY; SAPPHIRE; SURFACE CHEMISTRY; TRANSMISSION ELECTRON MICROSCOPY;

BLOCH WAVE SIMULATIONS; BURGERS VECTORS; HYDRIDE VAPOR PHASE EPITAXY;

GALLIUM NITRIDE;

EID: 33847218576     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2696309     Document Type: Article

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