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Journal of Crystal Growth

Volumn 284, Issue 3-4, 2005, Pages 561-566

Anisotropic intrinsic and extrinsic stresses in epitaxial wurtzitic GaN thin film on γ-LiAlO2 (1 0 0)

(5) Eiper, E a Hofmann, A b Gerlach, J W b Rauschenbach, B b Keckes, J a,c

a UNIVERSITY OF LEOBEN (Austria)

b LEIBNIZ INSTITUTE OF SURFACE ENGINEERING IOM (Germany)

c MATERIALS CENTER LEOBEN FORSCHUNG GMBH (Austria)

Author keywords

A1. Stresses; A1. X ray diffraction; B1. Nitrides; B2. Semiconducting gallium compounds

Indexed keywords

ANISOTROPY; DIFFRACTION; EPITAXIAL GROWTH; GALLIUM NITRIDE; ION BEAM ASSISTED DEPOSITION; MOLECULAR BEAM EPITAXY; PLASTIC DEFORMATION; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EXPANSION; THICKNESS MEASUREMENT; THIN FILMS; X RAY DIFFRACTION;

ANISOTROPIC EXTRINSIC STRESSES; ANISOTROPIC INTRINSIC STRESSES; HIGH TEMPERATURE X-RAY DIFFRACTION; THERMAL EXPANSION COEFFICIENTS;

RESIDUAL STRESSES;

EID: 26044479649 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.07.024 Document Type: Article

Times cited : (9)

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