Growth and characterization of single-crystalline gallium nitride using (1 0 0) LiAlO2 substrates

Journal of Crystal Growth

Volumn 274, Issue 1-2, 2005, Pages 14-20

  Reed, M D ^a   Kryliouk, O M ^a   Mastro, M A ^a   Anderson, T J ^a  

^a University of Florida   (United States)

Author keywords

A1. Characterization; A1. Substrates; A3. Hydride vapor phase epitaxy; B1. GaN; B2. Semiconducting III V materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR MATERIALS; SUBSTRATES; VAPOR PHASE EPITAXY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

GAN; HYDRIDE VAPOR-PHASE EPITAXY (HVPE); MICRO-RAMAN SPECTROSCOPY; SEMICONDUCTING III-V MATERIALS;

GALLIUM NITRIDE;

EID: 11144257761     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.09.079     Document Type: Article

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