Effects of carrier gas on the stress of a-plane GaN films grown on r-plane sapphire substrates by metalorganic chemical vapor deposition

Journal of Crystal Growth

Volumn 263, Issue 1-4, 2004, Pages 76-79

  Li, Dongsheng ^a   Chen, H ^a   Yu, H B ^a   Han, Y J ^a   Zheng, X H ^a   Huang, Q ^a   Zhou, J M ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

A3. Metalorganic chemical vapor deposition; B1. Nitrides

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL LATTICES; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; FILM GROWTH; GAS DYNAMICS; HYDROGEN; LIGHT POLARIZATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; RAMAN SCATTERING; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; STRESS ANALYSIS; X RAY DIFFRACTION ANALYSIS;

EPITAXIAL FILMS; GAN;

GALLIUM NITRIDE;

EID: 1242308884     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.11.060     Document Type: Article

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