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Journal of Crystal Growth

Volumn 312, Issue 23, 2010, Pages 3536-3543

The effects of annealing on non-polar (1 1 2̄ 0) a-plane GaN films

(8) Hao, Rui a Zhu, T a Hberlen, M a Chang, T Y a Kappers, M J a Oliver, R A a Humphreys, C J a Moram, M A a

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

A1. Basal stacking fault; A1. Dislocation; A1. TEM; A3. MOVPE; B1. Non polar GaN

Indexed keywords

A1. DISLOCATION; BASAL STACKING FAULTS; MOVPE; NON-POLAR GAN; TEM;

ANNEALING; DIFFRACTION; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; FILM GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; SULFUR COMPOUNDS; X RAY DIFFRACTION;

STACKING FAULTS;

EID: 78049250860 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.08.041 Document Type: Article

Times cited : (9)

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