In-situ monitoring of GaN growth by hydride vapor phase epitaxy

Physica Status Solidi (A) Applied Research

Volumn 194, Issue 2 SPEC., 2002, Pages 520-523

  Martin, D ^a   Carlin, J F ^a   Wagner, V ^a   Buhlmann H J ^a   Ilegems, M ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; EPITAXIAL GROWTH; HYDRIDES; REFLECTION; SYNTHESIS (CHEMICAL); THERMAL EFFECTS; VAPOR PHASE EPITAXY;

CARRIER GAS; GALLIUM CHLORIDE; HYDRIDE VAPOR PHASE EPITAXY;

GALLIUM NITRIDE;

EID: 0036960128     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200212)194:2<520::AID-PSSA520>3.0.CO;2-2     Document Type: Article

References (5)

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3. U. Ozgur, G. Webb-Wood, and H. O. Everitt, Appl. Phys. Lett. 79, 4103 (2001).
4. W. Seifert, G. Fitzl, and E. Butter, J. Cryst. Growth 52, 257 (1981).
5. V. Wagner, O. Parillaud, H. J. Bühlmann, M. Ilegems, S. Gradecak, P. Stadelmann, T. Riemann, and J. Christen, J. Appl. Phys. 92, 1307 (2002).