SCOPUS 정보 검색 플랫폼

Volumn 98, Issue 25, 2011, Pages

High-k (k=30) amorphous hafnium oxide films from high rate room temperature deposition

(8) Li, Flora M a Bayer, Bernhard C a Hofmann, Stephan a Dutson, James D b Wakeham, Steve J b Thwaites, Mike J b Milne, William I a Flewitt, Andrew J a

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

b Plasma Quest Limited (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN STRENGTHS; ELECTRICAL RESISTIVITY; HIGH DEPOSITION RATES; HIGH RATE; HIGH THROUGHPUT; OPTICAL GAP; PLASTIC ELECTRONICS; ROOM TEMPERATURE; ROOM TEMPERATURE DEPOSITION; SHORT RANGE ORDERS; STRUCTURAL CHARACTERIZATION;

AMORPHOUS FILMS; AMORPHOUS MATERIALS; ELECTRIC CONDUCTIVITY; HAFNIUM; HAFNIUM OXIDES; OXIDES;

OXIDE FILMS;

EID: 79959604629 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3601487 Document Type: Article

Times cited : (65)

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