Investigation of the Hf-based gate dielectrics deposited by reactive sputtering in oxygen or nitrogen atmosphere

Journal of the Electrochemical Society

Volumn 153, Issue 9, 2006, Pages

  Lu, Cheng Hsueh ^a   Lai, Yi Sheng ^a,b   Chen, J S ^a,b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b ELECTROCHEMICAL SOCIETY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; HAFNIUM COMPOUNDS; NITROGEN; OXYGEN; SPUTTERING; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

GATE DIELECTRICS; GLANCING INCIDENT ANGLE X-RAY DIFFRACTION (GIAXRD); HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM); HYSTERESIS LOOPS;

DIELECTRIC MATERIALS;

EID: 33746405211     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2212071     Document Type: Article

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