-
1
-
-
0035872897
-
-
JAPIAU 0021-8979,. 10.1063/1.1361065
-
G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. JAPIAU 0021-8979 89, 5243 (2001). 10.1063/1.1361065
-
(2001)
J. Appl. Phys.
, vol.89
, pp. 5243
-
-
Wilk, G.D.1
Wallace, R.M.2
Anthony, J.M.3
-
2
-
-
34247249900
-
Hafnium zirconate gate dielectric for advanced gate stack applications
-
DOI 10.1063/1.2716399
-
R. I. Hegde, D. H. Triyoso, S. B. Samavedam, and B. E. White, Jr., J. Appl. Phys. JAPIAU 0021-8979 101, 074113 (2007). 10.1063/1.2716399 (Pubitemid 46610135)
-
(2007)
Journal of Applied Physics
, vol.101
, Issue.7
, pp. 074113
-
-
Hegde, R.I.1
Triyoso, D.H.2
Samavedam, S.B.3
White Jr., B.E.4
-
3
-
-
77954729800
-
-
ESLEF6 1099-0062,. 10.1149/1.3456518
-
H. -S. Jung, J. -M. Park, H. K. Kim, J. H. Kim, S. -J. Won, J. Lee, S. Y. Lee, C. S. Hwang, W. -H. Kim, M. -W. Song, N. -I. Lee, and D. -Y. Cho, Electrochem. Solid-State Lett. ESLEF6 1099-0062 13, G71 (2010). 10.1149/1.3456518
-
(2010)
Electrochem. Solid-State Lett.
, vol.13
, pp. 71
-
-
Jung, H.-S.1
Park, J.-M.2
Kim, H.K.3
Kim, J.H.4
Won, S.-J.5
Lee, J.6
Lee, S.Y.7
Hwang, C.S.8
Kim, W.-H.9
Song, M.-W.10
Lee, N.-I.11
Cho, D.-Y.12
-
4
-
-
34249904900
-
Characteristics of atomic-layer-deposited thin Hfx Zr1-x O2 gate dielectrics
-
DOI 10.1116/1.2734978
-
D. H. Triyoso, R. I. Hegde, J. K. Schaeffer, R. Gregory, X. -D. Wang, M. Canonico, D. Roan, E. A. Hebert, K. Kim, J. Jiang, R. Rai, V. Kaushik, S. B. Samavedam, and N. Rochat, J. Vac. Sci. Technol. B JVTBD9 1071-1023 25, 845 (2007). 10.1116/1.2734978 (Pubitemid 46872377)
-
(2007)
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
, vol.25
, Issue.3
, pp. 845-852
-
-
Triyoso, D.H.1
Hegde, R.I.2
Schaeffer, J.K.3
Gregory, R.4
Wang, X.-D.5
Canonico, M.6
Roan, D.7
Hebert, E.A.8
Kim, K.9
Jiang, J.10
Rai, R.11
Kaushik, V.12
Samavedam, S.B.13
Rochat, N.14
-
5
-
-
70749097857
-
-
PLRBAQ 0556-2805,. 10.1103/PhysRevB.80.134119
-
X. Luo, W. Zhou, S. V. Ushakov, A. Navrotsky, and A. A. Demkov, Phys. Rev. B PLRBAQ 0556-2805 80, 134119 (2009). 10.1103/PhysRevB.80.134119
-
(2009)
Phys. Rev. B
, vol.80
, pp. 134119
-
-
Luo, X.1
Zhou, W.2
Ushakov, S.V.3
Navrotsky, A.4
Demkov, A.A.5
-
6
-
-
1642330111
-
-
PRLTAO 0031-9007,. 10.1103/PhysRevLett.92.057601
-
P. W. Peacock and J. Robertson, Phys. Rev. Lett. PRLTAO 0031-9007 92, 057601 (2004). 10.1103/PhysRevLett.92.057601
-
(2004)
Phys. Rev. Lett.
, vol.92
, pp. 057601
-
-
Peacock, P.W.1
Robertson, J.2
-
7
-
-
84944648082
-
-
ACACBN 0567-7394,. 10.1107/S0567739476001551
-
R. D. Shannon, Acta Crystallogr., Sect. A: Cryst. Phys., Diffr., Theor. Gen. Crystallogr. ACACBN 0567-7394 A32, 751 (1976). 10.1107/S0567739476001551
-
(1976)
Acta Crystallogr., Sect. A: Cryst. Phys., Diffr., Theor. Gen. Crystallogr.
, vol.32
, pp. 751
-
-
Shannon, R.D.1
-
8
-
-
0021834358
-
-
JACTAW 0002-7820,. 10.1111/j.1151-2916.1985.tb15247.x
-
P. Aldebert and J. -P. Traverse, J. Am. Ceram. Soc. JACTAW 0002-7820 68, 34 (1985). 10.1111/j.1151-2916.1985.tb15247.x
-
(1985)
J. Am. Ceram. Soc.
, vol.68
, pp. 34
-
-
Aldebert, P.1
Traverse, J.-P.2
-
9
-
-
33847577894
-
-
JPCHAX 0022-3654,. 10.1021/j100888a024
-
R. C. Garvie, J. Phys. Chem. JPCHAX 0022-3654 69, 1238 (1965). 10.1021/j100888a024
-
(1965)
J. Phys. Chem.
, vol.69
, pp. 1238
-
-
Garvie, R.C.1
-
11
-
-
45849155131
-
-
PRLTAO 0031-9007,. 10.1103/PhysRevLett.89.117601
-
G. -M. Rignanese, F. Detraux, X. Gonze, A. Bongiorno, and A. Pasquarello, Phys. Rev. Lett. PRLTAO 0031-9007 89, 117601 (2002). 10.1103/PhysRevLett.89. 117601
-
(2002)
Phys. Rev. Lett.
, vol.89
, pp. 117601
-
-
Rignanese, G.-M.1
Detraux, F.2
Gonze, X.3
Bongiorno, A.4
Pasquarello, A.5
-
13
-
-
0037084710
-
-
PLRBAQ 0556-2805,. 10.1103/PhysRevB.65.075105
-
X. Zhao and D. Vanderbilt, Phys. Rev. B PLRBAQ 0556-2805 65, 075105 (2002). 10.1103/PhysRevB.65.075105
-
(2002)
Phys. Rev. B
, vol.65
, pp. 075105
-
-
Zhao, X.1
Vanderbilt, D.2
-
15
-
-
77957559084
-
-
The spectra of 80-Å-thick PDA films were taken from, PLRBAQ 0556-2805,. 10.1103/PhysRevB.82.094104
-
The spectra of 80-Å-thick PDA films were taken from D. -Y. Cho, H. S. Jung, and C. S. Hwang, Phys. Rev. B PLRBAQ 0556-2805 82, 094104 (2010). 10.1103/PhysRevB.82.094104
-
(2010)
Phys. Rev. B
, vol.82
, pp. 094104
-
-
Cho, D.-Y.1
Jung, H.S.2
Hwang, C.S.3
-
16
-
-
0542395209
-
-
PLRBAQ 0556-2805,. 10.1103/PhysRevB.58.7565
-
A. L. Ankudinov, B. Ravel, J. J. Rehr, and S. D. Conradson, Phys. Rev. B PLRBAQ 0556-2805 58, 7565 (1998). 10.1103/PhysRevB.58.7565
-
(1998)
Phys. Rev. B
, vol.58
, pp. 7565
-
-
Ankudinov, A.L.1
Ravel, B.2
Rehr, J.J.3
Conradson, S.D.4
-
17
-
-
13244267586
-
-
PLRBAQ 0556-2805,. 10.1103/PhysRevB.68.054106
-
J. Kang, E. -C. Lee, and K. J. Chang, Phys. Rev. B PLRBAQ 0556-2805 68, 054106 (2003). 10.1103/PhysRevB.68.054106
-
(2003)
Phys. Rev. B
, vol.68
, pp. 054106
-
-
Kang, J.1
Lee, E.-C.2
Chang, K.J.3
-
18
-
-
0036049475
-
-
JACGAR 0021-8898,. 10.1107/S0021889802006829
-
M. Winterer, R. Delaplane, and R. McGreevy, J. Appl. Crystallogr. JACGAR 0021-8898 35, 434 (2002). 10.1107/S0021889802006829
-
(2002)
J. Appl. Crystallogr.
, vol.35
, pp. 434
-
-
Winterer, M.1
Delaplane, R.2
McGreevy, R.3
-
19
-
-
77958035753
-
-
The simulated spectrum for a cubic zirconia is same as that of tetragonal zirconia due to their similar local structures
-
The simulated spectrum for a cubic zirconia is same as that of tetragonal zirconia due to their similar local structures.
-
-
-
-
20
-
-
28044473015
-
Band gaps and defect levels in functional oxides
-
DOI 10.1016/j.tsf.2005.08.175, PII S0040609005014082, Proceedings of the Fourth International Symposium on Transparent Oxide Thin Film for Electronics and Optics (TOEO-4)
-
J. Robertson, K. Xiong, and S. J. Clark, Thin Solid Films THSFAP 0040-6090 496, 1 (2006). 10.1016/j.tsf.2005.08.175 (Pubitemid 41689856)
-
(2006)
Thin Solid Films
, vol.496
, Issue.1
, pp. 1-7
-
-
Robertson, J.1
Xiong, K.2
Clark, S.J.3
-
21
-
-
55349112563
-
-
PLRBAQ 0556-2805,. 10.1103/PhysRevB.78.132102
-
D. -Y. Cho, T. J. Park, K. D. Na, J. H. Kim, and C. S. Hwang, Phys. Rev. B PLRBAQ 0556-2805 78, 132102 (2008). 10.1103/PhysRevB.78.132102
-
(2008)
Phys. Rev. B
, vol.78
, pp. 132102
-
-
Cho, D.-Y.1
Park, T.J.2
Na, K.D.3
Kim, J.H.4
Hwang, C.S.5
-
22
-
-
18744362703
-
Modelling of dielectric constants of amorphous Zr silicates
-
DOI 10.1088/0953-8984/17/21/005, PII S0953898405923023
-
G. -M. Rignanese and A. Pasquarello, J. Phys.: Condens. Matter JCOMEL 0953-8984 17, S2089 (2005). 10.1088/0953-8984/17/21/005 (Pubitemid 40666631)
-
(2005)
Journal of Physics Condensed Matter
, vol.17
, Issue.21
-
-
Rignanese, G.-M.1
Pasquarello, A.2
-
23
-
-
34347364643
-
-
PLRBAQ 0556-2805,. 10.1103/PhysRevB.75.195105
-
H. Momida, T. Hamada, Y. Takagi, T. Yamamoto, T. Uda, and T. Ohno, Phys. Rev. B PLRBAQ 0556-2805 75, 195105 (2007). 10.1103/PhysRevB.75.195105
-
(2007)
Phys. Rev. B
, vol.75
, pp. 195105
-
-
Momida, H.1
Hamada, T.2
Takagi, Y.3
Yamamoto, T.4
Uda, T.5
Ohno, T.6
-
24
-
-
66549129085
-
-
APPLAB 0003-6951,. 10.1063/1.3143223
-
D. Tahir, E. K. Lee, S. K. Oh, T. T. Tham, H. J. Kang, H. Jin, S. Heo, J. C. Park, J. G. Chung, and J. C. Lee, Appl. Phys. Lett. APPLAB 0003-6951 94, 212902 (2009). 10.1063/1.3143223
-
(2009)
Appl. Phys. Lett.
, vol.94
, pp. 212902
-
-
Tahir, D.1
Lee, E.K.2
Oh, S.K.3
Tham, T.T.4
Kang, H.J.5
Jin, H.6
Heo, S.7
Park, J.C.8
Chung, J.G.9
Lee, J.C.10
|