SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 109, Issue 11, 2011, Pages

Electrical characterization of n-type Al0.30Ga0.70N Schottky diodes

(3) Arehart, A R a Allerman, A A b Ringel, S A a

a The Ohio State University (United States)

b SANDIA NATIONAL LABORATORIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; BANDGAP STATE; BARRIER HEIGHTS; CAPACITANCE VOLTAGE; CARRIER TRAPPING; CATION VACANCIES; CURRENT TRANSPORT; CURRENT VOLTAGE; DEEP LEVEL OPTICAL SPECTROSCOPY; ELECTRICAL CHARACTERIZATION; ENERGY POSITION; FORWARD BIAS; HIGH CONCENTRATION; HIGH QUALITY; IMPACT DEVICE; INTERNAL PHOTOEMISSION; REVERSE BIAS; REVERSE LEAKAGE CURRENT; SCHOTTKY DIODES; SHALLOW TRAPS; THERMIONIC-FIELD EMISSION; TRANSPORT MECHANISM; TRAP CONCENTRATION; TRAP SPECTROSCOPY;

ALUMINUM; BIAS VOLTAGE; BINDING ENERGY; DIODES; ELECTRIC PROPERTIES; EMISSION SPECTROSCOPY; FIELD EMISSION; GALLIUM; GALLIUM ALLOYS; POWER QUALITY; SCHOTTKY BARRIER DIODES;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 79959435133 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3592284 Document Type: Article

Times cited : (62)

References (62)

1
- 79959455341
- A. R. Arehart, A. C. Malonis, C. Poblenz, Y. Pei, J. S. Speck, U. K. Mishra, and S. A. Ringel, Phys. Status Solidi C (to be published).
- Phys. Status Solidi C
- Arehart, A.R.¹ Malonis, A.C.² Poblenz, C.³ Pei, Y.⁴ Speck, J.S.⁵ Mishra, U.K.⁶ Ringel, S.A.⁷

2
- 0033738001
- 10.1109/55.843146
- B. M. Green, K. K. Chu, E. M. Chumbes, J. A. Smart, J. R. Shealy, and L. F. Eastman, Electron Dev. Lett. 21, 268 (2000). 10.1109/55.843146
- (2000) Electron Dev. Lett. , vol.21 , pp. 268
- Green, B.M.¹ Chu, K.K.² Chumbes, E.M.³ Smart, J.A.⁴ Shealy, J.R.⁵ Eastman, L.F.⁶

3
- 64249092831
- 10.1109/TDMR.2008.922017
- M. Faqir, G. Verzellesi, A. Chini, F. Fantini, F. Danesin, G. Meneghesso, E. Zanoni, and C. Dua, IEEE Trans. Device Mater. Reliab. 8, 240 (2008). 10.1109/TDMR.2008.922017
- (2008) IEEE Trans. Device Mater. Reliab. , vol.8 , pp. 240
- Faqir, M.¹ Verzellesi, G.² Chini, A.³ Fantini, F.⁴ Danesin, F.⁵ Meneghesso, G.⁶ Zanoni, E.⁷ Dua, C.⁸

4
- 79959407055
- 2010 IEEE International, 20.1
- A. R. Arehart, A. Sasikumar, G. D. Via, B. Winningham, B. Poling, E. Heller, and S. A. Ringel, Electron Devices Meeting (IEDM), 2010 IEEE International, 20.1 (2010).
- (2010) Electron Devices Meeting (IEDM)
- Arehart, A.R.¹ Sasikumar, A.² Via, G.D.³ Winningham, B.⁴ Poling, B.⁵ Heller, E.⁶ Ringel, S.A.⁷

5
- 9944258410
- 10.1016/j.jcrysgro.2004.08.035
- A. A. Allerman, M. H. Crawford, A. J. Fischer, K. H. A. Bogart, S. R. Lee, D. M. Follstaedt, P. P. Provencio, and D. D. Koleske, J. Cryst. Growth 272, 227 (2004). 10.1016/j.jcrysgro.2004.08.035
- (2004) J. Cryst. Growth , vol.272 , pp. 227
- Allerman, A.A.¹ Crawford, M.H.² Fischer, A.J.³ Bogart, K.H.A.⁴ Lee, S.R.⁵ Follstaedt, D.M.⁶ Provencio, P.P.⁷ Koleske, D.D.⁸

6
- 34548704938
- Entirely crack-free ultraviolet GaN/AlGaN laser diodes grown on 2-in. Sapphire substrate
- DOI 10.1143/JJAP.46.5782
- H. Yoshida, Y. Takagi, M. Kuwabara, H. Amano, and H. Kan, Jpn. J. Appl. Phys. 46, 5782 (2007). 10.1143/JJAP.46.5782 (Pubitemid 47438420)
- (2007) Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers , vol.46 , Issue.9 A , pp. 5782-5784
- Yoshida, H.¹ Takagi, Y.² Kuwabara, M.³ Amano, H.⁴ Kan, H.⁵

7
- 33745017941
- AlGaN multiple quantum well based deep UV LEDs and their applications
- DOI 10.1002/pssa.200565427
- M. A. Khan, Phys. Status Solidi A 203, 1764 (2006). 10.1002/pssa. 200565427 (Pubitemid 43875369)
- (2006) Physica Status Solidi (A) Applications and Materials , vol.203 , Issue.7 , pp. 1764-1770
- Khan, M.A.¹

8
- 38749146896
- 10.1038/nphoton.2007.293
- A. Khan, K. Balakrishnan, and T. Katona, Nat. Photon. 2, 77 (2008). 10.1038/nphoton.2007.293
- (2008) Nat. Photon. , vol.2 , pp. 77
- Khan, A.¹ Balakrishnan, K.² Katona, T.³

9
- 0037089129
- 10.1143/JJAP.41.L435
- V. Adivarahan, J. Zhang, A. Chitnis, W. Shuai, J. Sun, R. Pachipulusu, M. Shatalov, and M. A. Kha, Jpn. J. Appl. Phys. 41, L435 (2002). 10.1143/JJAP.41.L435
- (2002) Jpn. J. Appl. Phys. , vol.41 , pp. 435
- Adivarahan, V.¹ Zhang, J.² Chitnis, A.³ Shuai, W.⁴ Sun, J.⁵ Pachipulusu, R.⁶ Shatalov, M.⁷ Kha, M.A.⁸

10
- 57849151596
- 10.1063/1.3050539
- H. Yoshida, Y. Yamashita, M. Kuwabara, and H. Kan, Appl. Phys. Lett. 93, 241106 (2008). 10.1063/1.3050539
- (2008) Appl. Phys. Lett. , vol.93 , pp. 241106
- Yoshida, H.¹ Yamashita, Y.² Kuwabara, M.³ Kan, H.⁴

11
- 30344487285
- Surface plasmon dielectric waveguides
- DOI 10.1063/1.2142096, 241106
- Z. Q. Fang, D. C. Look, D. H. Kim, and I. Adesida, Appl. Phys. Lett. 87 182115 (2005). 10.1063/1.2142096 (Pubitemid 43054835)
- (2005) Applied Physics Letters , vol.87 , Issue.24 , pp. 1-3
- Smolyaninov, I.I.¹ Hung, Y.-J.² Davis, C.C.³

12
- 4243616039
- Defect characterization by DLTS of AlGaN UV Schottky photodetectors
- DOI 10.1016/S0921-4526(01)00938-3, PII S0921452601009383
- M. J. Legodi, S. S. Hullavarad, S. A. Goodman, M. Hayes, and F. D. Auret, Physica B 308-310, 1189 (2001). 10.1016/S0921-4526(01)00938-3 (Pubitemid 34040825)
- (2001) Physica B: Condensed Matter , vol.308-310 , pp. 1189-1192
- Legodi, M.J.¹ Hullavarad, S.S.² Goodman, S.A.³ Hayes, M.⁴ Auret, F.D.⁵

13
- 20844433676
- 1-xN films grown by molecular-beam epitaxy
- DOI 10.1063/1.1887817, 152109
- Y. S. Park, C. J. Park, C. M. Park, J. H. Na, J. S. Oh, I. T. Yoon, H. Y. Cho, T. W. Kang, and J.-E. Oh, Appl. Phys. Lett. 86, 152109 (2005). 10.1063/1.1887817 (Pubitemid 40861418)
- (2005) Applied Physics Letters , vol.86 , Issue.15 , pp. 1-3
- Park, Y.S.¹ Park, C.J.² Park, C.M.³ Na, J.H.⁴ Oh, J.S.⁵ Yoon, I.T.⁶ Cho, H.Y.⁷ Kang, T.W.⁸ Oh, J.-E.⁹

14
- 33748274120
- Photoluminescence studies of impurity transitions in AlGaN alloys
- DOI 10.1063/1.2337856
- N. Nepal, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 89, 092107 (2006). 10.1063/1.2337856 (Pubitemid 44319939)
- (2006) Applied Physics Letters , vol.89 , Issue.9 , pp. 092107
- Nepal, N.¹ Nakarmi, M.L.² Lin, J.³ Jiang, H.X.⁴

15
- 20844448179
- Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys
- DOI 10.1063/1.1943489, 222108
- K. B. Nam, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 86, 222108 (2005). 10.1063/1.1943489 (Pubitemid 40861601)
- (2005) Applied Physics Letters , vol.86 , Issue.22 , pp. 1-3
- Nam, K.B.¹ Nakarmi, M.L.² Lin, J.Y.³ Jiang, H.X.⁴

16
- 33846119233
- Spatial distribution of deep level defects in crack-free AlGaN grown on GaN with a high-temperature AlN interlayer
- DOI 10.1063/1.2402964
- Q. Sun, H. Wang, D. S. Jiang, R. Q. Jin, Y. Huang, S. M. Zhang, H. Yang, U. Jahn, and K. H. Ploog, J. Appl. Phys. 100, 123101 (2006). 10.1063/1.2402964 (Pubitemid 46058125)
- (2006) Journal of Applied Physics , vol.100 , Issue.12 , pp. 123101
- Sun, Q.¹ Wang, H.² Jiang, D.S.³ Jin, R.Q.⁴ Huang, Y.⁵ Zhang, S.M.⁶ Yang, H.⁷ Jahn, U.⁸ Ploog, K.H.⁹

17
- 74449088122
- 10.1016/j.physb.2009.08.160
- D. Y. Protasov, O. E. Tereshchenko, K. S. Zhuravlev, A. Y. Polyakov, N. B. Smirnov, and A. V. Govorkov, Physica B 404, 4870 (2009). 10.1016/j.physb. 2009.08.160
- (2009) Physica B , vol.404 , pp. 4870
- Protasov, D.Y.¹ Tereshchenko, O.E.² Zhuravlev, K.S.³ Polyakov, A.Y.⁴ Smirnov, N.B.⁵ Govorkov, A.V.⁶

18
- 0037122090
- 10.1088/0953-8984/14/48/351
- Z.-Q. Fang, D. C. Look, and L. Polenta, J. Phys.: Condens. Matter 14, 13061 (2002). 10.1088/0953-8984/14/48/351
- (2002) J. Phys.: Condens. Matter , vol.14 , pp. 13061
- Fang, Z.-Q.¹ Look, D.C.² Polenta, L.³

19
- 33846063341
- Quantitative observation and discrimination of AlGaN- and GaN-related deep levels in AlGaN/GaN heterostructures using capacitance deep level optical spectroscopy
- DOI 10.1063/1.2424670
- A. Armstrong, A. Chakraborty, J. S. Speck, S. P. DenBaars, U. K. Mishra, and S. A. Ringel, Appl. Phys. Lett. 89, 262116 (2006). 10.1063/1.2424670 (Pubitemid 46058029)
- (2006) Applied Physics Letters , vol.89 , Issue.26 , pp. 262116
- Armstrong, A.¹ Chakraborty, A.² Speck, J.S.³ DenBaars, S.P.⁴ Mishra, U.K.⁵ Ringel, S.A.⁶

20
- 79959469092
- Ph.D. Thesis, Ohio State University
- A. R. Arehart, Ph.D. Thesis, Ohio State University, 2009.
- (2009)
- Arehart, A.R.¹

21
- 0000543163
- 10.1016/0038-1098(65)90039-6
- G. Lucovsky, Solid State Commun. 3, 299 (1965). 10.1016/0038-1098(65) 90039-6
- (1965) Solid State Commun. , vol.3 , pp. 299
- Lucovsky, G.¹

22
- 0000845971
- 10.1103/PhysRevB.23.5335
- A. Chantre, G. Vincent, and D. Bois, Phys. Rev. B 23, 5335 (1981). 10.1103/PhysRevB.23.5335
- (1981) Phys. Rev. B , vol.23 , pp. 5335
- Chantre, A.¹ Vincent, G.² Bois, D.³

23
- 0042027169
- 10.1063/1.371933
- A. Hierro, D. Kwon, S. A. Ringel, S. Rubini, E. Pelucchi, and A. Franciosi, J. Appl. Phys. 87, 730 (2000). 10.1063/1.371933
- (2000) J. Appl. Phys. , vol.87 , pp. 730
- Hierro, A.¹ Kwon, D.² Ringel, S.A.³ Rubini, S.⁴ Pelucchi, E.⁵ Franciosi, A.⁶

24
- 11744341266
- 10.1103/PhysRev.38.45
- R. H. Fowler, Phys. Rev. 38, 45 (1931). 10.1103/PhysRev.38.45
- (1931) Phys. Rev. , vol.38 , pp. 45
- Fowler, R.H.¹

25
- 0004005306
- (Wiley, New York)
- S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
- (1981) Physics of Semiconductor Devices
- Sze, S.M.¹

26
- 0011715992
- 10.1088/0022-3727/4/10/319
- H. C. Card and E. H. Rhoderick, J. Phys. D: Appl. Phys. 4, 1589 (1971). 10.1088/0022-3727/4/10/319
- (1971) J. Phys. D: Appl. Phys. , vol.4 , pp. 1589
- Card, H.C.¹ Rhoderick, E.H.²

27
- 36449000058
- 10.1063/1.347243
- J. H. Werner and H. H. Guttler, J. Appl. Phys. 69, 1522 (1991). 10.1063/1.347243
- (1991) J. Appl. Phys. , vol.69 , pp. 1522
- Werner, J.H.¹ Guttler, H.H.²

28
- 3342986527
- 10.1103/PhysRevB.45.13509
- R. T. Tung, Phys. Rev. B 45, 13509 (1992). 10.1103/PhysRevB.45.13509
- (1992) Phys. Rev. B , vol.45 , pp. 13509
- Tung, R.T.¹

29
- 0000113985
- 10.1116/1.589442
- R. F. Schmitsdorf, T. U. Kampen, and W. Monch, J. Vac. Sci. Technol. B 15, 1221 (1997). 10.1116/1.589442
- (1997) J. Vac. Sci. Technol. B , vol.15 , pp. 1221
- Schmitsdorf, R.F.¹ Kampen, T.U.² Monch, W.³

30
- 31644446727
- 0.75N/GaN grown by molecular-beam epitaxy
- DOI 10.1063/1.2159547, 023703
- H. Zhang, E. J. Miller, and E. T. Yu, J. Appl. Phys. 99, 023703 (2006). 10.1063/1.2159547 (Pubitemid 43172389)
- (2006) Journal of Applied Physics , vol.99 , Issue.2 , pp. 1-6
- Zhang, H.¹ Miller, E.J.² Yu, E.T.³

31
- 1242352434
- 10.1063/1.1644029
- E. J. Miller, E. T. Yu, P. Waltereit, and J. S. Speck, Appl. Phys. Lett. 84, 535 (2004). 10.1063/1.1644029
- (2004) Appl. Phys. Lett. , vol.84 , pp. 535
- Miller, E.J.¹ Yu, E.T.² Waltereit, P.³ Speck, J.S.⁴

32
- 0001062092
- 10.1016/0038-1101(66)90097-9
- F. A. Padovani and R. Stratton, Solid-State Electron. 9, 695 (1966). 10.1016/0038-1101(66)90097-9
- (1966) Solid-State Electron. , vol.9 , pp. 695
- Padovani, F.A.¹ Stratton, R.²

33
- 84889629764
- (Wiley-VCH, Weinheim), Vol.
- H. Morkoc, Handbook of Nitride Semiconductors and Devices: Electronic and Optical Processes in nItrides (Wiley-VCH, Weinheim, 2008), Vol. 2.
- (2008) Handbook of Nitride Semiconductors and Devices: Electronic and Optical Processes in NItrides , vol.2
- Morkoc, H.¹

34
- 0035982804
- Mechanism of anomalous current transport in n-type GaN Schottky contacts
- DOI 10.1116/1.1491539
- H. Hasegawa and S. Oyama, J. Vac. Sci. Technol. B 20, 1647 (2002). 10.1116/1.1491539 (Pubitemid 35017114)
- (2002) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol.20 , Issue.4 , pp. 1647-1655
- Hasegawa, H.¹ Oyama, S.²

35
- 4644317191
- 10.1016/j.apsusc.2004.06.152
- J. Kotani, H. Hasegawa, and T. Hashizume, Appl. Surf. Sci. 237, 213 (2004). 10.1016/j.apsusc.2004.06.152
- (2004) Appl. Surf. Sci. , vol.237 , pp. 213
- Kotani, J.¹ Hasegawa, H.² Hashizume, T.³

36
- 4944243010
- 10.1116/1.1771678
- J. Kotani, T. Hashizume, and H. Hasegawa, J. Vac. Sci. Technol. B 22, 2179 (2004). 10.1116/1.1771678
- (2004) J. Vac. Sci. Technol. B , vol.22 , pp. 2179
- Kotani, J.¹ Hashizume, T.² Hasegawa, H.³

37
- 33746836077
- Effect of threading dislocation density on Ni/n-GaN Schottky diode I-V characteristics
- DOI 10.1063/1.2219985
- A. R. Arehart, B. Moran, J. S. Speck, U. K. Mishra, S. P. DenBaars, and S. A. Ringel, J. Appl. Phys. 100, 023709 (2006). 10.1063/1.2219985 (Pubitemid 44179557)
- (2006) Journal of Applied Physics , vol.100 , Issue.2 , pp. 023709
- Arehart, A.R.¹ Moran, B.² Speck, J.S.³ Mishra, U.K.⁴ DenBaars, S.P.⁵ Ringel, S.A.⁶

38
- 3342926149
- 10.1016/j.apsusc.2004.05.091
- T. Hashizume and H. Hasegawa, Appl. Surf. Sci. 234, 387 (2004). 10.1016/j.apsusc.2004.05.091
- (2004) Appl. Surf. Sci. , vol.234 , pp. 387
- Hashizume, T.¹ Hasegawa, H.²

39
- 0035541090
- 10.1002/1521-3951(200111)228:1<>1.0.CO;2-O
- A. Hierro, A. R. Arehart, B. Heying, M. Hansen, J. S. Speck, U. K. Mishra, S. P. DenBaars, and S. A. Ringel, Phys. Status Solidi B 228, 309 (2001). 10.1002/1521-3951(200111)228:1<>1.0.CO;2-O
- (2001) Phys. Status Solidi B , vol.228 , pp. 309
- Hierro, A.¹ Arehart, A.R.² Heying, B.³ Hansen, M.⁴ Speck, J.S.⁵ Mishra, U.K.⁶ Denbaars, S.P.⁷ Ringel, S.A.⁸

40
- 25144489522
- Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon
- DOI 10.1063/1.2005379, 053704
- A. Armstrong, A. R. Arehart, D. Green, U. K. Mishra, J. S. Speck, and S. A. Ringel, J. Appl. Phys. 98, 053704 (2005). 10.1063/1.2005379 (Pubitemid 41345092)
- (2005) Journal of Applied Physics , vol.98 , Issue.5 , pp. 1-11
- Armstrong, A.¹ Arehart, A.R.² Green, D.³ Mishra, U.K.⁴ Speck, J.S.⁵ Ringel, S.A.⁶

41
- 21444438968
- A method to determine deep level profiles in highly compensated, wide band gap semiconductors
- DOI 10.1063/1.1862321, 083529
- A. Armstrong, A. R. Arehart, and S. A. Ringel, J. Appl. Phys. 97, 083529 (2005). 10.1063/1.1862321 (Pubitemid 40914202)
- (2005) Journal of Applied Physics , vol.97 , Issue.8 , pp. 1-6
- Armstrong, A.¹ Arehart, A.R.² Ringel, S.A.³

42
- 0004052502
- (Academic Press, San Diego)
- P. Blood and J. W. Orton, The Electrical Characterization of Semiconductors: Majority Carriers and Electron States (Academic Press, San Diego, 1992).
- (1992) The Electrical Characterization of Semiconductors: Majority Carriers and Electron States
- Blood, P.¹ Orton, J.W.²

43
- 65449151005
- 10.1088/0022-3727/42/9/095103
- D. Seghier and H. P. Gislason, J. Phys. D 42, 095103 (2009). 10.1088/0022-3727/42/9/095103
- (2009) J. Phys. D , vol.42 , pp. 095103
- Seghier, D.¹ Gislason, H.P.²

44
- 74349091620
- 10.1016/j.physb.2009.08.200
- D. Seghier and H. Gislason, Physica B 404, 4880 (2009). 10.1016/j.physb.2009.08.200
- (2009) Physica B , vol.404 , pp. 4880
- Seghier, D.¹ Gislason, H.²

45
- 0000162849
- 10.1103/PhysRevLett.44.593
- G. D. Watkins and J. R. Troxell, Phys. Rev. Lett. 44, 593 (1980). 10.1103/PhysRevLett.44.593
- (1980) Phys. Rev. Lett. , vol.44 , pp. 593
- Watkins, G.D.¹ Troxell, J.R.²

46
- 0000869373
- 10.1103/PhysRevB.56.R10020
- C. G. Van de Walle, Phys. Rev. B 56, R10020 (1997). 10.1103/PhysRevB.56. R10020
- (1997) Phys. Rev. B , vol.56 , pp. 10020
- Van De Walle, C.G.¹

47
- 0037089374
- 10.1103/PhysRevB.65.155212
- C. Stampfl and C. G. Van de Walle, Phys. Rev. B 65, 155212 (2002). 10.1103/PhysRevB.65.155212
- (2002) Phys. Rev. B , vol.65 , pp. 155212
- Stampfl, C.¹ Van De Walle, C.G.²

48
- 37749041152
- 10.1103/PhysRevB.77.035201
- Y. Zhang, W. Liu, and H. Niu, Phys. Rev. B 77, 035201 (2008). 10.1103/PhysRevB.77.035201
- (2008) Phys. Rev. B , vol.77 , pp. 035201
- Zhang, Y.¹ Liu, W.² Niu, H.³

49
- 0021494078
- Universal trend in the binding energies of deep impurities in semiconductors
- DOI 10.1063/1.95351
- M. J. Caldas, A. Fazzio, and A. Zunger, Appl. Phys. Lett. 45, 671 (1984). 10.1063/1.95351 (Pubitemid 14646925)
- (1984) Applied Physics Letters , vol.45 , Issue.6 , pp. 671-673
- Caldas, M.J.¹ Fazzio, A.² Zunger Alex³

50
- 0000807908
- 10.1103/PhysRevLett.54.849
- A. Zunger, Phys. Rev. Lett. 54, 849 (1985). 10.1103/PhysRevLett.54.849
- (1985) Phys. Rev. Lett. , vol.54 , pp. 849
- Zunger, A.¹

51
- 0001154218
- 10.1063/1.123140
- C. I. Wu and A. Kahn, Appl. Phys. Lett. 74, 546 (1999). 10.1063/1.123140
- (1999) Appl. Phys. Lett. , vol.74 , pp. 546
- Wu, C.I.¹ Kahn, A.²

52
- 18044401316
- AlN films on GaN: Sources of error in the photoemission measurement of electron affinity
- DOI 10.1063/1.1333716
- V. M. Bermudez, C.-I. Wu, and A. Kahn, J. Appl. Phys. 89, 1991 (2001). 10.1063/1.1333716 (Pubitemid 33630038)
- (2001) Journal of Applied Physics , vol.89 , Issue.3 , pp. 1991
- Bermudez, V.M.¹ Wu, C.-I.² Kahn, A.³

53
- 0000330622
- 10.1063/1.367182
- C. I. Wu, A. Kahn, N. Taskar, D. Dorman, and D. Gallagher, J. Appl. Phys. 83, 4249 (1998). 10.1063/1.367182
- (1998) J. Appl. Phys. , vol.83 , pp. 4249
- Wu, C.I.¹ Kahn, A.² Taskar, N.³ Dorman, D.⁴ Gallagher, D.⁵

54
- 1242265229
- 10.1063/1.1643540
- A. Armstrong, A. R. Arehart, B. Moran, S. P. DenBaars, U. K. Mishra, J. S. Speck, and S. A. Ringel, Appl. Phys. Lett. 84, 374 (2004). 10.1063/1.1643540
- (2004) Appl. Phys. Lett. , vol.84 , pp. 374
- Armstrong, A.¹ Arehart, A.R.² Moran, B.³ Denbaars, S.P.⁴ Mishra, U.K.⁵ Speck, J.S.⁶ Ringel, S.A.⁷

55
- 0033897018
- 10.1007/s11664-000-0087-3
- G. Parish, S. Keller, S. Denbaars, and U. Mishra, J. Electron. Mater. 29, 15 (2000). 10.1007/s11664-000-0087-3
- (2000) J. Electron. Mater. , vol.29 , pp. 15
- Parish, G.¹ Keller, S.² Denbaars, S.³ Mishra, U.⁴

56
- 3442887478
- C. G. Van de Walle, C. Stampfl, J. Neugebauer, M. D. McCluskey, and N. M. Johnson, MRS Internet J. Nitride Semicond. Res. 4S1, G10.4 (1999).
- (1999) MRS Internet J. Nitride Semicond. Res. , vol.41 , pp. 104
- Van De Walle, C.G.¹ Stampfl, C.² Neugebauer, J.³ McCluskey, M.D.⁴ Johnson, N.M.⁵

57
- 0001799977
- 10.1063/1.117934
- P. Boguslawski, E. L. Briggs, and J. Bernholc, Appl. Phys. Lett. 69, 233 (1996). 10.1063/1.117934
- (1996) Appl. Phys. Lett. , vol.69 , pp. 233
- Boguslawski, P.¹ Briggs, E.L.² Bernholc, J.³

58
- 0001268519
- 10.1103/PhysRevB.60.8147
- I. Gorczyca, A. Svane, and N. E. Christensen, Phys. Rev. B 60, 8147 (1999). 10.1103/PhysRevB.60.8147
- (1999) Phys. Rev. B , vol.60 , pp. 8147
- Gorczyca, I.¹ Svane, A.² Christensen, N.E.³

59
- 0003054767
- I. Gorczyca, A. Svane, and N. E. Christensen, MRS Internet J. Nitride Semicond. Res. 2, 18 (1997).
- (1997) MRS Internet J. Nitride Semicond. Res. , vol.2 , pp. 18
- Gorczyca, I.¹ Svane, A.² Christensen, N.E.³

60
- 79955985938
- 1-xN
- DOI 10.1063/1.1450038
- J. Li, T. N. Oder, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 80, 1210 (2002). 10.1063/1.1450038 (Pubitemid 34180528)
- (2002) Applied Physics Letters , vol.80 , Issue.7 , pp. 1210
- Li, J.¹ Oder, T.N.² Nakarmi, M.L.³ Lin, J.Y.⁴ Jiang, H.X.⁵

61
- 0032092032
- 10.1016/S0022-0248(98)00345-5
- M. Katsuragawa, S. Sota, M. Komori, C. Anbe, T. Takeuchi, H. Sakai, H. Amano, and I. Akasaki, J. Cryst. Growth 189-190, 528 (1998). 10.1016/S0022-0248(98)00345-5
- (1998) J. Cryst. Growth , vol.189-190 , pp. 528
- Katsuragawa, M.¹ Sota, S.² Komori, M.³ Anbe, C.⁴ Takeuchi, T.⁵ Sakai, H.⁶ Amano, H.⁷ Akasaki, I.⁸

62
- 4244176015
- 10.1103/PhysRevB.66.075209
- L. E. Ramos, J. Furthmuller, L. M. R. Scolfaro, J. R. Leite, and F. Bechstedt, Phys. Rev. B 66, 075209 (2002). 10.1103/PhysRevB.66.075209
- (2002) Phys. Rev. B , vol.66 , pp. 075209
- Ramos, L.E.¹ Furthmuller, J.² Scolfaro, L.M.R.³ Leite, J.R.⁴ Bechstedt, F.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.