Electrical properties and deep traps spectra in AlGaN films with nitrogen and gallium polarities prepared by molecular beam epitaxy

Physica B: Condensed Matter

Volumn 404, Issue 23-24, 2009, Pages 4870-4872

  Protasov, D Yu ^a   Tereshchenko, O E ^a   Zhuravlev, K S ^a   Polyakov, A Y ^b   Smirnov, N B ^b   Govorkov, A V ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b INSTITUTE OF RARE METALS   (Russian Federation)

Author keywords

AlGaN; Deep traps; Impurity; Polarity

Indexed keywords

ACCEPTOR SPECIES; ADMITTANCE SPECTROSCOPIES; ALGAN; ALGAN FILMS; ALGAN/GAN; ALN; ALN NUCLEATION LAYERS; CAPACITANCE VOLTAGE MEASUREMENTS; COMBINED-BUFFER; CURRENT VOLTAGE; DEEP TRAPS; ELECTRICAL PROPERTY; LOW TEMPERATURES; MOLE FRACTION; P-TYPE CONDUCTIVITY; TRANSIENT SPECTROSCOPY;

ALUMINUM; CRYSTAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PHOTOLUMINESCENCE SPECTROSCOPY; SEMICONDUCTOR QUANTUM WIRES;

ELECTRIC PROPERTIES;

EID: 74449088122     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.08.160     Document Type: Article

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