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Applied Physics Letters

Volumn 93, Issue 24, 2008, Pages

Demonstration of an ultraviolet 336 nm AlGaN multiple-quantum-well laser diode

(4) Yoshida, Harumasa a Yamashita, Yoji a Kuwabara, Masakazu a Kan, Hirofumi a

a CENTRAL RESEARCH LABORATORY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CORUNDUM; EPITAXIAL GROWTH; GALLIUM; GALLIUM ALLOYS; LADDER NETWORKS; LASERS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

EPITAXIAL LATERAL OVERGROWTHS; EXTERNAL QUANTUM EFFICIENCIES; LASER DIODES; LASER EMISSIONS; LASER OPERATIONS; PEAK OUTPUT POWERS; PEAK WAVELENGTHS; PULSED CURRENT MODES; QUANTUM-WELL LASERS; ROOM TEMPERATURES; SAPPHIRE SUBSTRATES; SPECTRAL BANDS; TRANSVERSE ELECTRICS; ULTRA VIOLETS;

PULSED LASER APPLICATIONS;

EID: 57849151596 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3050539 Document Type: Article

Times cited : (248)

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