Defect characterization by DLTS of AlGaN UV Schottky photodetectors

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 1189-1192

  Legodi, M J ^a   Hullavarad, S S ^a   Goodman, S A ^a   Hayes, M ^a   Auret, F D ^a  

^a UNIVERSITY OF PRETORIA   (South Africa)

Author keywords

Aluminium gallium nitride; Defects; UV photodetectors

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON TRAPS; HETEROJUNCTIONS; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; PROTON IRRADIATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS;

SCHOTTKY PHOTODETECTORS;

ULTRAVIOLET DETECTORS;

EID: 4243616039     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00938-3     Document Type: Article

References (8)