Computer simulation of current transport in GaN and AlGaN Schottky diodes based on thin surface barrier model

Applied Surface Science

Volumn 237, Issue 1-4, 2004, Pages 213-218

  Kotani, Junji ^a   Hasegawa, Hideki ^a   Hashizume, Tamotsu ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

AlGaN; Deep donor; Field emission; GaN; Leakage current; Schottky; Thermionic field emission; Tunneling

Indexed keywords

ALUMINUM COMPOUNDS; COMPUTER SIMULATION; ELECTRIC POTENTIAL; ELECTRON TUNNELING; FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES; SENSORS; THERMAL EFFECTS; THERMIONIC EMISSION;

CURRENT TRANSPORT; DEEP DONOR; FIELD EMISSIONS; THERMIONIC-FIELD EMISSIONS; THIN SURFACE BARRIER;

GALLIUM NITRIDE;

EID: 4644317191     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.06.152     Document Type: Conference Paper

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