Dislocation-related electron capture behaviour of traps in n-type GaN

Journal of Physics Condensed Matter

Volumn 14, Issue 48, 2002, Pages 13061-13068

  Fang, Z Q ^a   Look, D C ^a   Polenta, L ^b  

^a WRIGHT STATE UNIVERSITY   (United States)

^b UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; DISLOCATIONS (CRYSTALS); ELECTRON TRAPS; MOLECULAR BEAM EPITAXY; POINT DEFECTS;

DISLOCATION DENSITY; ELECTRON CAPTURE; HYDRIDE VAPOUR PHASE EPITAXY; REACTIVE MOLECULAR BEAM EPITAXY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0037122090     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/48/351     Document Type: Article

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