Spatial distribution of deep level defects in crack-free AlGaN grown on GaN with a high-temperature AlN interlayer

Journal of Applied Physics

Volumn 100, Issue 12, 2006, Pages

  Sun, Q ^a   Wang, H ^a   Jiang, D S ^a   Jin, R Q ^a   Huang, Y ^a   Zhang, S M ^a   Yang, H ^a   Jahn, U ^b   Ploog, K H ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CRACKS; FILM GROWTH; HIGH TEMPERATURE EFFECTS; PHASE SEPARATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

DEEP LEVEL AQUAMARINE LUMINESCENCE (DLAL); LATERAL DISTRIBUTION; SPATIAL DISTRIBUTION;

SEMICONDUCTING FILMS;

EID: 33846119233     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2402964     Document Type: Article

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