Deep level defects in Si-doped AlxGa1-xN films grown by molecular-beam epitaxy

Applied Physics Letters

Volumn 86, Issue 15, 2005, Pages 1-3

  Park, Y S ^a   Park, C J ^a,c   Park, C M ^a   Na, J H ^a,d   Oh, J S ^a   Yoon, I T ^a   Cho, H Y ^a   Kang, T W ^a   Oh, Jae Eung ^b  

^a Dongguk University   (South Korea)

^b Hanyang University   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^d UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DEFECTS; DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); ELECTRON EMISSION; ELECTRON ENERGY LEVELS; ELECTRON TRAPS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR LASERS; SILICON; SPECTROSCOPIC ANALYSIS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

DOPANTS; THREADING DISLOCATIONS; TRANSIENT SPECTROSCOPY; TRAP ENERGY LEVELS;

ALUMINUM COMPOUNDS;

EID: 20844433676     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1887817     Document Type: Article

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