Kelvin probe force microscopy in the presence of intrinsic local electric fields

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 4, 2011, Pages 777-789

  Baumgart, Christine ^a   Müller, Anne Dorothea ^b   Müller, Falk ^b   Schmidt, Heidemarie ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b Anfatec Instruments AG   (Germany)

Author keywords

dopant profiling; doping; Kelvin probe force microscopy; semiconductors

Indexed keywords

BACKGROUND SIGNALS; CONDUCTIVE PROBE; DIFFUSION PROCESS; DOPANT PROFILING; DOPING; ELECTRIC DIPOLE; ELECTRICAL SIGNAL; FREQUENCY DEPENDENCE; FREQUENCY-DEPENDENT; INTERNAL ELECTRIC FIELDS; KELVIN PROBE FORCE MICROSCOPY; LATERAL VARIATIONS; LOCAL ELECTRIC FIELD; OPERATION FREQUENCY; SEMICONDUCTOR NANOSTRUCTURES; SEMICONDUCTORS; SURFACE REGION;

ELECTRIC FIELDS; ELECTRIC FORCE MICROSCOPY; PROBES;

SEMICONDUCTOR DOPING;

EID: 79954429041     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201026251     Document Type: Review

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