Imaging the electric properties of InAs/InP(001) quantum dots capped with a thin InP layer by conductive atomic force microscopy: Evidence of memory effect

Applied Physics Letters

Volumn 89, Issue 11, 2006, Pages

  Smaali, K ^a   Troyon, M ^a   El Hdiy, A ^a   Molinari, M ^a   Saint Girons, G ^b   Patriarche, G ^b  

^a UNIVERSITÉ DE REIMS CHAMPAGNE ARDENNE   (France)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CONDUCTIVE MATERIALS; ELECTRIC CURRENTS; ELECTRIC PROPERTIES; ELECTRON TRAPS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; VAPOR PHASE EPITAXY;

CAP LAYERS; CONDUCTIVE ATOMIC FORCE MICROSCOPY; METAL ORGANIC VAPOR PHASE EPITAXY; WETTING LAYERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33748697231     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2349288     Document Type: Article

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