Comparison of two-dimensional carrier profiles in metal-oxide-semiconductor field-effect transistor structures obtained with scanning spreading resistance microscopy and inverse modeling

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 1, 2000, Pages 540-544

  De Wolf, P ^a,c   Vandervorst, W ^a   Smith, H ^b   Khalil, N ^b,d  

^a IMEC   (Belgium)

^b HEWLETT PACKARD COMPANY   (United States)

^c Digital Instruments   (United States)

^d CADENCE DESIGN SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MICROSCOPIC EXAMINATION; SEMICONDUCTOR JUNCTIONS;

CARRIER PROFILES; INVERSE MODELING; SCANNING SPREADING RESISTANCE MICROSCOPY;

MOSFET DEVICES;

EID: 0033683036     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591228     Document Type: Article

References (6)

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