Surface potential mapping of biased pn junction with kelvin probe force microscopy: Application to cross-section devices

Applied Surface Science

Volumn 235, Issue 4, 2004, Pages 507-512

  Doukkali, A ^a   Ledain, S ^a   Guasch, C ^b   Bonnet, J ^b  

^a NXP SEMICONDUCTORS   (Netherlands)

^b UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

Electrostatic force microscopy; Kelvin potential; Silicon p n junction

Indexed keywords

ADSORPTION; ATOMIC FORCE MICROSCOPY; CALIBRATION; CARRIER CONCENTRATION; ELECTRIC FIELDS; ELECTROSTATICS; ETCHING; POLARIZATION;

KELVIN PROBE FORCE MICROSCOPY (KPFM); SCANNING CAPACITANCE MICROSCOPY; SURFACE POTENTIAL; SURFACE PREPARATION;

SEMICONDUCTOR JUNCTIONS;

EID: 4243075354     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.03.249     Document Type: Article

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