Kelvin probe force microscopy on III-V semiconductors: The effect of surface defects on the local work function

Materials Science and Engineering: B

Volumn 102, Issue 1-3, 2003, Pages 138-142

  Glatzel, Th ^a   Sadewasser, S ^a   Shikler, R ^b   Rosenwaks, Y ^b   Lux Steiner, M Ch ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b TEL AVIV UNIVERSITY   (Israel)

Author keywords

Gallium arsenide; Gallium phosphide; Kelvin probe force microscopy; Surface defects; Surface photovoltage; Work function

Indexed keywords

DEFECTS; ELECTRIC POTENTIAL; MICROSCOPIC EXAMINATION; OPTICAL RESOLVING POWER; PROBES; SURFACE REACTIONS; ULTRAHIGH VACUUM;

LOCAL WORK FUNCTIONS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0041511690     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(03)00020-5     Document Type: Conference Paper

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