Two-dimensional carrier profiling by kelvin-probe force microscopy

Japanese Journal of Applied Physics

Volumn 47, Issue 6 PART 1, 2008, Pages 4448-4453

  Tsui, Bing Yue ^a   Hsieh, Chih Ming ^a   Su, Po Chih ^a   Tzeng, Shien Der ^b   Gwo, Shangjr ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Kelvin probe force microscopy; Scanning probe microscopy; Surface potential

Indexed keywords

CIVIL AVIATION; CONCENTRATION (PROCESS); DEPTH PROFILING; MASS SPECTROMETRY; MICROSCOPIC EXAMINATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR JUNCTIONS; SURFACE POTENTIAL; SURFACE PROPERTIES; SURFACE TREATMENT;

CAPACITANCE-VOLTAGE; CARRIER DEPTH PROFILING; CARRIER PROFILING; FORCE MICROSCOPIES; KELVIN-PROBE FORCE MICROSCOPY; P-N JUNCTIONS; POTENTIAL DIFFERENCES; SCANNING PROBE MICROSCOPY; SECONDARY ION MASS SPECTROSCOPIES; SIGNAL RESPONSES; SMALL PITCHES; SPREADING RESISTANCE PROFILING;

TWO DIMENSIONAL;

EID: 53649089146     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.4448     Document Type: Article

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