Two-dimensional dopant profiling of an integrated circuit using bias-applied phase-imaging tapping mode atomic force microscopy

Electrochemical and Solid-State Letters

Volumn 2, Issue 9, 1999, Pages 475-477

  Nelson, M W ^a   Schroeder, P G ^a   Schlaf, R ^a,b   Parkinson, B A ^a  

^a Department of Environmental and Radiological Health Sciences   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; IMAGING TECHNIQUES; INTEGRATED CIRCUITS; RANDOM ACCESS STORAGE;

TAPPING MODE ATOMIC FORCE MICROSCOPY;

SEMICONDUCTOR DOPING;

EID: 0032626101     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1390875     Document Type: Article

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