Observation of individual dopants in a thin silicon layer by low temperature Kelvin Probe Force Microscope

Applied Physics Letters

Volumn 93, Issue 14, 2008, Pages

  Ligowski, MacIej ^a,b   Moraru, Daniel ^a   Anwar, Miftahul ^a   Mizuno, Takeshi ^a   Jablonski, Ryszard ^b   Tabe, Michiharu ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

^b WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; BORON COMPOUNDS; PHOSPHORUS; SILICON; SURFACE PROPERTIES;

BACK GATE VOLTAGE; BORON ATOMS; KELVIN PROBE FORCE MICROSCOPE; KELVIN PROBE FORCE MICROSCOPY; LOW TEMPERATURE; LOW TEMPERATURES; POTENTIAL FLUCTUATIONS; SILICON LAYERS;

SURFACE POTENTIAL;

EID: 53649106264     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2992202     Document Type: Article

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