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Volumn 44, Issue 1-3, 1997, Pages 46-51
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Scanning capacitance microscopy applied to two-dimensional dopant profiling of semiconductors
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Author keywords
Dopant profiles; Semiconductors; Silicon
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Indexed keywords
FINITE ELEMENT METHOD;
HETEROJUNCTIONS;
IMAGE QUALITY;
MATHEMATICAL MODELS;
SEMICONDUCTOR DOPING;
DOPANT PROFILES;
SCANNING CAPACITANCE MICROSCOPY (SCM);
SEMICONDUCTOR MATERIALS;
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EID: 0002373959
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/S0921-5107(96)01797-7 Document Type: Article |
Times cited : (35)
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References (14)
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