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Volumn 44, Issue 1-3, 1997, Pages 46-51

Scanning capacitance microscopy applied to two-dimensional dopant profiling of semiconductors

Author keywords

Dopant profiles; Semiconductors; Silicon

Indexed keywords

FINITE ELEMENT METHOD; HETEROJUNCTIONS; IMAGE QUALITY; MATHEMATICAL MODELS; SEMICONDUCTOR DOPING;

EID: 0002373959     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01797-7     Document Type: Article
Times cited : (35)

References (14)
  • 6
    • 0003552056 scopus 로고    scopus 로고
    • Semiconductor Industry Association, 4300 Stevens Creek Boulevard, San Jose, CA
    • The National Technology Roadmap for Semiconductors, Semiconductor Industry Association, 4300 Stevens Creek Boulevard, San Jose, CA.
    • The National Technology Roadmap for Semiconductors
  • 12
    • 0030106718 scopus 로고    scopus 로고
    • J.F. Marchiando, Intl. J. Num. Meth. Eng., 39 (1996) 1029; J. Res. Inst. Stand. Technol., 100 (1995) 661.
    • (1995) J. Res. Inst. Stand. Technol. , vol.100 , pp. 661


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.