Activities towards p-type doping of ZnO

Journal of Physics: Conference Series

Volumn 265, Issue 1, 2011, Pages

  Brauer, G ^a   Kuriplach, J ^b   Ling, C C ^c   Djurisic A B ^c  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b CHARLES UNIVERSITY   (Czech Republic)

^c UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; ELECTRONS; ION IMPLANTATION; NANORODS; POSITRONS; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; ZINC OXIDE;

FORMATION PROCESS; GROWTH CONDITIONS; N-TYPE CONDUCTIVITY; P TYPE CONDUCTIVITY; SCHOTTKY CONTACTS; STRUCTURAL DEFECT; TRAPPING SITES; ZINC OXIDE (ZNO);

II-VI SEMICONDUCTORS;

EID: 79952054333     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/265/1/012002     Document Type: Conference Paper

References (92)

1. Look D C 2001 Materials Sci. Eng. B 80 383
2. Transparent Conducting Oxides vol 25 ed D S Ginley and C Bright (MRS Bull) p 15 2000
3. zgür, Alivov Ya I, Lin C, Teke A, Reshchikov M A, Dogan S, Avrutin V, Cho S-J, Morkoc H 2005 J Appl Phys 98 041301
4. Look D C 2006 J Electron Mater 35 1299
5. Tsukazaki A et al 2005 Nature Mater 4 42
6. von Wenckstern H, Pickenhain R, Schmidt H, Brandt M, Biehne G, Lorenz M, Grundmann M and Brauer G 2006 Appl Phys Lett 89 092122
7. Gu Q L, Ling C C, Brauer G, Anwand W, Skorupa W, Hsu Y F, Djurisic A B, Zhu C Y, Fung S and Lu L W 2008 Appl Phys Lett 92 222109
8. Positron Spectroscopy of Solids ed A Dupasquier and A P Mills Jr (Amsterdam: IOS) 1995
9. Krause-Rehberg R and Leipner H S 1999 Positron Annihilation in Semiconductors - Defect Studies (Berlin: Springer)
10. Slow Positron Beam Techniques for Solids and Surfaces Appl Surf Sci vol 194 ed Brauer G and Anwand W 2002
11. Brauer G, Anwand W, Skorupa W, Kuriplach J, Melikhova O, Moisson C, von Wenckstern H, Schmidt H, Lorenz M and Grundmann M 2006 Phys Rev B 74 045208
12. Brauer G, Kuriplach J, Cizek J, Anwand W, Melikhova O, Prochazka I and W Skorupa 2007 Vacuum 81 1314
13. Brauer G, Anwand W, Grambole D, Grenzer J, Skorupa W, Cizek J, Kuriplach J, Prochazka I, Ling C C, So C K, Schulz D and Klimm D 2009 Phys Rev B 79 115212
14. Garces N Y, Wang L, Giles N C, Halliburton L E, Cantwell G and Eaton D B 2003 J Appl Phys 94 519
15. Carlos W E, Glaser E R and Look D C 2001 Physica B 308-310 976
16. Aliev G N, Bingham S J, Wolverson D, Davie J J, Makino H, Ko H J and Yao T 2004 Phys Rev B 70 115206
17. Vlasenko L S and Watkins G D 2005 Phys Rev B 72 035203
18. Kaschner A et al 2002 Appl Phys Lett 80 1909
19. Kaschner A, Siegle H, Kaczmarczyk G, Strassburg M, Hoffmann A, Thomsen C, Birkle U, Einfeldt S and Hommel D 1999 Appl Phys Lett 74 3281
20. Pearton S J, Norton D P, Ip K, Heo Y W and Steiner T 2004 J Vac Sci Technol B 22 932
21. Keyes B M, Gedvilas L M, Li X and Coutts T J J Cryst Growth 281 297
22. Li X, Keyes B M, Asher S E, Zhang S B, Wei S-H, Coutts T J, Limpijumnong S, Van de Walle C G 2005 Appl Phys Lett 86 122107
23. Perkins C L, Lee S-H, Li X, Asher S E and Coutts T J 2005 J Appl Phys 97 034907
24. Lee E-C, Kim Y-S, Jin Y-G and Chang K J 2001 Phys Rev B 64 085120
25. Limpijumnong S, Li X, Wei S-H and Zhang S B 2005 Appl Phys Lett 86 211910
26. Ohtomo A, Kawasaki M, Koida T, Masubuchi K, Koinuma H, Sakurai Y, Yoshida Y, Yasuda T and Segawa Y 1998 Appl Phys Lett 72 2466
27. Bundesmann C, Schubert M, Spemann D, Butz T, Lorenz M, Kaidashev E M and Grundmann M 2002 Appl Phys Lett 81 2376
28. Schmidt R et al 2003 Appl Phys Lett 82 2260
29. Makino T, Segawa Y, Kawasaki M, Ohtomo A, Shiroki R, Tamura K, Yasuda T and Koinuma H 2001 Appl Phys Lett 78 1237
30. Lorenz M et al 2003 Solid-State Electronics 47 2205
31. Gai Y Q et al 2008 Appl Phys Lett 92 062110
32. Lee E-C and Chang K J 2004 Phys Rev B 70 115210
33. Yan Y, Al-Jassim M M and Wei S-H 2006 Appl Phys Lett 89 181912
34. Limpijumnong S, Zhang S B, Wei S-H and Park C H 2004 Phys Rev Lett 92 155504
35. Kim K-K, Kim H-S, Hwang D-K, Lim J-H and Park S-J 2003 Appl Phys Lett 83 63
36. Morhain C, Teisseire M, Vezian S, Vigue F, Raymond F, Lorenzini P, Guion J, Neu G and Faurie J-P 2002 Phys Stat Sol (b) 229 881
37. Ryu Y R, Lee T S and White H W 2003 Appl Phys Lett 83 87
38. Aoki T, Shimizu Y, Miyake A, Nakamura A, Nakanishi Y and Hatanaka Y 2002 Phys Stat Sol (b) 229 911
39. Janotti A and Van de Walle C G 2006 J Cryst Growth 287 58
40. Schmidt M, Ellguth M, Czekalla C, von Wenckstern H, Pickenhain R, Grundmann M, Brauer G, Skorupa W, Helm M, Gu Q and Ling C C 2009 J Vac Sci Technol B 27 1597
41. von Wenckstern H, Biehne G, Abdel Rahman R, Hochmuth H, Lorenz M and Grundmann M 2006 Appl Phys Lett 88 092102
42. http://www.srim.org/
43. Frank T et al 2007 Appl Phys A 88 141
44. Cao B Q, Lorenz M, Rahm A, von Wenckstern H, Czekalla C, Lenzner J, Benndorf G and Grundmann M 2007 Nanotechnology 18 455707
45. Xiang B, Wang P W, Zhang X Z, Dayeh S A, Aplin D P R, Soci C, Yu D P and Wang D L 2007 Nano Lett 7 323
46. Zeng D W, Xie C S, Zhu B L, Jiang R, Chen X, Song W L, Wang J B and Shi J 2004 J Crystal Growth 266 511
47. Wei H Y, Wu Y S, Wu L L and Hu C X 2005 Mater Lett 59 271
48. Lee W, Jeong M C, Joo S W and Myoung J M 2005 Nanotechnology 16 764
49. Lin C-C, Chen H-P and Chen S-Y 2005 Chem Phys Lett 404 30
50. Mohanta K, Batabyal S K and Pal A J 2007 Chem Mater 18 3662
51. Hsu Y F et al 2008 Adv Funct Mater 18 1020
52. Wong C-Y, Lai L-M, Leung S-L, Roy V A L and Pun E Y-B 2008 Appl Phys Lett 93 023502
53. Sun J C, Liang H W, Zhao J Z, Bian J M, Feng Q J, Hu L Z, Zhang H Q, Liang X P, Luo Y M and Du G T 2008 Chem Phys Lett 460 548
54. Chu S, Lim J H, Mandalapu L J, Yang Z, Li L and Liu J L 2008 Appl Phys Lett 92 152103
55. Yun E-J, Park H-S, Lee K H, Nam H G and Jung M 2008 J Appl Phys 103 073507
56. Shet S, Ahn K-S, Yan Y, Deutsch T, Chrustowski K M, Turner J, Al-Jassim M and Ravindra N 2008 J Appl Phys 103 073504
57. Zhang Y Z, Lu J G, Ye Z Z, He H P, Zhao B H and Wang L 2008 Appl Surf Sci 254 1993
58. Fan J C, Zhu C Y, Fung S, Zhong Y C, Wong K S, Xie Z, Brauer G, Anwand W, Skorupa W, To C K, Yang B, Beling C D and Ling C C 2009 J Appl Phys 106 073709
59. Ma Y, Du G T, Yang S R, Li Z T, Zhao B J, Yang X T, Yang T P, Zhang Y T and Liu D L 2004 J Appl Phys 95 6268
60. Zeng Y J, Ye Z Z, Xu W Z, Lu J G, Zhu H P, Zhao B H, Che Y and Zhang S B 2006 Appl Phys Lett 88 262103
61. Aranovich J A, Golmayo D G, Fahrenbruch A L and Bube R H 1980 J Appl Phys 51 4260
62. Rhoderick E H and Williams R H 1988 Metal-Semiconductor Contacts (Oxford: Clarendon) p 48
63. Mead C A 1965 Phys Lett 18 218
64. Neville R C and Mead C A 1970 J Appl Phys 41 3795
65. Coppa B J, Davis R F and Nemanich R J 2003 Appl Phys Lett 82 400
66. Auret F D, Goodman S A, Hayes M, Legodi M J, van Laarhoven H A and Look D C 2001 Appl Phys Lett 79 3074
67. Polyakov A Y, Smirnov N B, Kozhukhova E A, Vdovin V I, Ip K, Heo Y W, Norton D P and Pearton S J 2003 Appl Phys Lett 83 1575
68. Yuan G, Ye Z, Zhu L, Huang J, Qian Q and Zhao B 2004 J Crystal Growth 268 169
69. Oh D C, Kim J J, Makino H, Hanada T, Cho M W, Yao T and Ko H J 2005 Appl Phys Lett 86 042110
70. Mosbacker H L, Strzhemechny Y M, White B D, Smith P E, Look D C, Reynolds D C, Litton C W and Brillson L J 2005 Appl Phys Lett 87 012102
71. Sheng H, Muthukumar S, Emanetoglu N W and Lu Y 2002 Appl Phys Lett 80 2132
72. Ip K et al 2004 Appl Phys Lett 84 5133
73. Kim S-H, Kim H-K and Seong T-Y 2005 Appl Phys Lett 86 112101
74. Kim S-H, Kim H-K and Seong T-Y 2005 Appl Phys Lett 86 022101
75. von Wenckstern H, Kaidashev E M, Lorenz M, Hochmuth H, Biehne G, Lenzner J, Gottschalch V, Pickenhain R and Grundmann M 2004 Appl Phys Lett 84 79
76. Weichsel C, Pagni O and Leitch A W R 2005 Semicond Sci Technol 20 840
77. Gu Q L et al 2007 Appl Phys Lett 90 122101
78. Gu Q L et al 2008 J Appl Phys 103 093706
79. Schifano R, Monakhov E V, Grossner U and Svensson B G 2007 Appl Phys Lett 91 193507
80. Brillson L J, Mosbacker H L, Hetzer M J, Strzhemechny Y, Jessen G H, Look D C, Cantwell G, Zhang J and Song J J 2007 Appl Phys Lett 90 102116
81. Brauer G, Anwand W, Grambole D, Skorupa W, Hou Y, Andreev A, Teichert C, Tam K H and Djurisic A B 2007 Nanotechnology 18 195301
82. Kresse G and Hafner J 1993 Phys Rev B 47 558
83. Kresse G and Hafner J 1994 Phys Rev B 49 14251
84. Kresse G and Furthmüller J 1996 Comput Mater Sci 6 15
85. Kresse G and Furthmüller J 1996 Phys Rev B 54 11169
86. Kresse G and Hafner J 1994 J Phys: Condens Matter 6 8245
87. Kresse G and Joubert D 1999 Phys Rev B 59 1758
88. Puska M J and Nieminen R M 1983 J Phys F: Metal Phys 13 333
89. Seitsonen A P, Puska M J and Nieminen R M 1995 Phys Rev B 51 14057
90. Van de Walle C G 2000 Phys Rev Lett 85 1012
91. Wardle M G, Goss J P and Briddon P R 2006 Phys Rev Lett 96 205504
92. Takenaka H and Singh D J 2007 Phys Rev B 75 241102(R)