Dominant effect of near-interface native point defects on ZnO Schottky barriers

Applied Physics Letters

Volumn 90, Issue 10, 2007, Pages

  Brillson, L J ^a,g   Mosbacker, H L ^a,g   Hetzer, M J ^a,g   Strzhemechny, Y ^b   Jessen, G H ^c   Look, D C ^c,d   Cantwell, G ^e   Zhang, J ^e   Song, J J ^e,f  

^a Ohio State University   (United States)

^b TEXAS CHRISTIAN UNIVERSITY   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

^d WRIGHT STATE UNIVERSITY   (United States)

^e ZN Technology Inc   (United States)

^f UNIVERSITY OF CALIFORNIA   (United States)

^g OHIO STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

OXYGEN PLASMA PROCESSING; REMOTE OXYGEN PLASMAS; SCHOTTKY BARRIER PROPERTIES;

ADSORBATES; CATHODOLUMINESCENCE; CRYSTAL GROWTH; CURRENT VOLTAGE CHARACTERISTICS; METALLIZING; SCHOTTKY BARRIER DIODES; SINGLE CRYSTAL SURFACES;

ZINC OXIDE;

EID: 33947147840     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2711536     Document Type: Article

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